Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA636 2SA636A
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1098/1098A
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For audio frequency power amplifier and
low speed switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
T
Collector-base voltage Open emitter -70 V
2SA636 -45
Collector-emitter voltage
2SA636A
Open base
V
-60
Emitter-base voltage Open collector -5 V
Collector current -3 A
Collector current-peak -5 A
B Base current -0.6 A
TC=25℃ 10
Total power dissipation
=25℃ 1.2
T
a
W
T
T
stg
Junction temperature 150 ℃
j
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA636 2SA636A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
h
h
CEsat
BEsat
I
CBO
I
EBO
FE-1
FE-2
C
f
OB
T
Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.5 -2.0 V
Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.8 -2.0 V
Collector cut-off current VCB=-45V; IE=0 -1 μA
Emitter cut-off current VEB=-3V; IC=0 -1 μA
DC current gain IC=-20mA ; VCE=-5V 20
DC current gain IC=-0.5A ; VCE=-5V 40 250
Output capacitance IE=0; VCB=-10V;f=1MHz 60 pF
Transition frequency IC=-0.1A ; VCB=-5V 45 MHz
h
classifications
FE-2
N M L K
40-60 50-100 80-160 120-250
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA636 2SA636A
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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