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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1869
DESCRIPTION
·With TO-220F package
·Complement to type 2SC4935
APPLICATIONS
·Power amplifier applications
PINNING
PIN DESCRIPTION
1
Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -0.3 A
B
P
C
Collector-base voltage Open emitter -50 V
Collector-emitter voltage Open base -50 V
Emitter-base voltage Open collector -5 V
Collector current -3 A
Collector dissipation
℃)
T
=25℃
C
10 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1869
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
V
I
I
h
h
C
h
Collector-emitter breakdown voltage IC=-10mA ; IB=0 B -50 V
CEsat
BE
CBO
EBO
FE-1
FE-2
OB
f
T
Collector-emitter saturation voltage IC=-2A ;IB=-0.2A B -0.3 -0.6 V
Base-emitter voltage IC=-0.5A ; VCE=-2V -0.8 -1.0 V
Collector cut-off current VCB=-50V; IE=0 -1.0
Emitter cut-off current VEB=-5V; IC=0 -1.0
DC current gain IC=-0.5A ; VCE=-2V 70 240
DC current gain IC=-2.5A ; VCE=-2V 30
Output capacitance IE=0; VCB=-10V;f=1MHz 35 pF
Transition frequency IC=-0.5A ; VCE=-2V 100 MHz
Classifications
FE-1
μA
μA
O Y
70-140 120-240
2
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1869
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1869
4
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