Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1859 2SA1859A
DESCRIPTION
·With TO-220F package
·Complement to type 2SC4883/4883A
APPLICATIONS
·For audio output driver and TV
velocity-modulation applications
PINNING
PIN DESCRIPTION
1
Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA1859 -150
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -1 A
B
Collector-base voltage
2SA1859A
Open emitter
V
-180
2SA1859 -150
Collector-emitter voltage
2SA1859A
Open base
V
-180
Emitter-base voltage Open collector -6 V
Collector current -2 A
T
P
C
T
j
T
stg
Collector dissipation
Junction temperature 150
Storage temperature -55~150
=25℃
C
20 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1859 2SA1859A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
Switching time
t
on
t
s
Collector-emitter
breakdown voltage
2SA1859 -150
2SA1859A
=-10mA ; IB=0 B
I
C
-180
V
Collector-emitter saturation voltage IC=-0.7A;IB=-70mA -1.0 V
Collector cut-off
2SA1859 VCB=-150V;IE=0 -10
μA
current
2SA1859A V
=-180V;IE=0 -10
CB
Emitter cut-off current VEB=-6V; IC=0 -10
μA
μA
DC current gain IC=-0.7A ; VCE=-10V 60 240
Transition frequency IC=-0.7A ; VCE=-12V 60 MHz
Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF
Turn-on time 0.50
=-1A ;IB1=-IB2=-0.1A
I
Storage time 1.00
C
=-20V ,RL=20Ω
V
CC
μs
μs
t
f
Fall time
2
0.50
μs
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1859 2SA1859A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1859 2SA1859A
4
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