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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1803
DESCRIPTION ·
·With TO-3PML package
·Complement to type 2SC4688
APPLICATIONS
·Power amplifier applications
·Recommend for 40W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B Base current -0.6 A
B
Collector-base voltage Open emitter -80 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -5 V
Collector current -6 A
Collector current-peak -12 A
=25℃)
a
T
P
C
T
j
T
stg
Collector power dissipation
Junction temperature 150
Storage temperature -55~150
=25℃
C
55 W
℃
℃
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1803
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(sat)
V
I
CBO
I
EBO
h
h
C
BE
FE-1
FE-2
f
T
OB
Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V
Collector-emitter saturation voltage IC=-5A;IB=-0.5 A -2.0 V
Base-emitter voltage IC=-3A ; VCE=-5V -1.5 V
Collector cut-off current VCB=-80V; IE=0 -5
Emitter cut-off current VEB=-5V; IC=0 -5
DC current gain IC=-1A ; VCE=-5V 55 160
DC current gain IC=-3A ; VCE=-5V 35
Transition frequency IC=-1A ; VCE=-5V 30 MHz
Output capacitance IE=0; VCB=-10V;f=1MHz 290 pF
h
classifications
FE-1
R O
μA
μA
55-110 80-160
2
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1803
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.1mm)
3
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1803
4
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