Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1771
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching
PINNING
PIN DESCRIPTION
1
Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -1.2 A
B
P
C
Collector-base voltage Open emitter -80 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -14 V
Collector current -12 A
T
Collector dissipation
=25℃
C
30 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1771
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -80 V
Collector-emitter saturation voltage IC=-6A ;IB=-0.3A B -0.4 V
Base-emitter saturation voltage IC=-6A; IB=-0.3A -1.2 V
Collector cut-off current VCB=-80V; IE=0 -10
Emitter cut-off current VEB=-14V; IC=0 -10
μA
μA
DC current gain IC=-1A ; VCE=-1V 100 320
DC current gain IC=-6A ; VCE=-1V 40
Transition frequency IC=-1A ; VCE=-5V 50 MHz
Collector output capacitance f=1MHz;VCB=-10V 300 pF
t
on
Turn-on time 0.2
μs
IB1=-IB2=-0.3A; VCC=-30V
=5Ω
t
s
Storage time 0.6
R
L
μs
Duty cycle≤1%
t
f
Fall time
0.1
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1771
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1771
4
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