Page 1
INCHANGE Semiconductor Product Specification
Silicon PNP Power Transistor 2SA1741
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A)
·Low Saturation Voltage: V
CE(sat)
APPLICATIONS
·This type of power transistor is developed for high-speed
switching and features a high h
ideal for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= -60V(Min)
= -0.3V(Max)@ (IC= -3A, IB= -0.15A)
B
at low V
FE
=25℃)
a
CE(sat)
,which is
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
J
T
stg
Collector-Base Voltage -100 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -7.0 V
Collector Current-Continuous -5.0 A
Collector Current-Pulse -10 A
B Base Current-Continuous -2.5 A
Total Power Dissipation @TC=25℃
Total Power Dissipation @Ta=25℃
Junction Temperature 150
Storage Temperature -55~150
25
W
2.0
℃
℃
Page 2
INCHANGE Semiconductor Product Specification
Silicon PNP Power Transistor 2SA1741
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless o t herwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEX(SUS)
V
CE
(sat)-
V
CE
(sat)-
V
BE
(sat)-
V
BE
(sat)-
I
CBO
I
CER
I
CEX
I
EBO
h
FE-1
h
FE-2
Collector-Emitter Sustaining Voltage IC= -3.0A ; IB= -0.3A, L= 1mH -60 V
I
= -3.0A ; IB1=-IB2= -0.3A,
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A B -0.3 V
1
Collector-Emitter Saturation Voltage IC= -4A; IB= -0.2A B -0.5 V
2
Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A B -1.2 V
1
Base-Emitter Saturation Voltage IC= -4A; IB= -0.2A B -1.5 V
2
C
V
BE(OFF)
=1.5V, L=180μH,clamped
-60 V
Collector Cutoff Current VCB= -60V ; IE=0 -10 μA
Collector Cutoff Current VCE= -60V ; RBE= 50Ω,Ta=125℃ -1.0 mA
Collector Cutoff Current
= -60V; V
CE
= -60V; V
V
CE
= -1.5V
BE(off)
= -1.5V,Ta=125℃
BE(off)
-10
-1.0
μA
mA
V
Emitter Cutoff Current VEB= -5V; IC=0 -10 μA
DC Current Gain IC= -0.5A ; VCE= -2V 100
DC Current Gain IC= -1.0A ; VCE= -2V 100 400
h
FE-3
C
OB
f
T
DC Current Gain IC= -3.0A ; VCE= -2V 60
Output Capacitance IE=0 ; VCB= -10V;f= 1.0MHz 130 pF
Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V 80 MHz
Switching times
t
on
t
stg
t
f
Turn-on Time 0.3 μs
Storage Time 1.5 μs
Fall Time
h
Classifications
FE-2
M L K
100-200 150-300 200-400
I
= -3.0A ,RL= 17Ω,
C
I
= -IB2= -0.15A,VCC≈-50V
B1
0.3 μs
2
Page 3
INCHANGE Semiconductor Product Specification
Silicon PNP Power Transistor 2SA1741
3
Loading...