Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1718
DESCRIPTION
·With TO-220F package
·High DC current gain.
·Low collector saturation voltage.
·DARLINGTON
APPLICATIONS
·Ideal for motor drviers and solenoid
drivers application
PINNING
PIN DESCRIPTION
1
Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B Base current -0.5 A
B
P
C
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -7 V
Collector current -5 A
Collector current-peak -10 A
Collector dissipation
TC=25℃
=25℃
T
a
20
W
2.0
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1718
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
h
FE-1
FE-2
Collector-emitter breakdown voltage IC=-30mA; IB=0 -100 V
Collector-emitter saturation voltage IC=-2A ; IB=-2mA -1.5 V
Base-emitter saturation voltage IC=-2A ; IB=-2mA -2.0 V
Collector cut-off current VCB=-100V;IE=0 -10
Emitter cut-off current VEB=-7V;IC=0 -5.0 mA
DC current gain IC=-2A ; VCE=-2V 2000 20000
DC current gain IC=-4A ; VCE=-2V 500
h
classifications
FE
M L K
μA
2000-5000 4000-10000 8000-20000
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1718
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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