Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1659
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
V
= -160V(Min)
CEO
·Complement to Type 2SC4370
·Full-mold package that does not require an insulating
board or bushing when mounting.
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
=25℃)
a
V
V
V
I
C(DC)
I
B(DC)
P
T
T
CBO
CEO
EBO
C
J
stg
Collector-Base Voltage -160 V
Collector-Emitter Voltage -160 V
Emitter-Base Voltage -5.0 V
Collector Current(DC) -1.5 A
Base Current -0.15 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
Storage Temperature -55~150 ℃
20 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1659
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
I
CBO
I
EBO
h
C
(sat)
FE
OB
f
T
Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -160 V
Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V
Collector Cutoff Current VCB= -160V ; IE=0 -1.0 μA
Emitter Cutoff Current VEB= -5V; IC=0 -1.0 μA
DC Current Gain IC= -100mA ; VCE= -5V 70 240
Output Capacitance IE=0 ; VCB= -10V;f= 1.0MHz 30 pF
Current-Gain—Bandwidth Product IC=-100m A ; VCE= -10V 100 MHz
hFE Classifications
O Y
70-140 120-240
isc Website：www.iscsemi.cn
2
Page 3
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1659
isc Website：www.iscsemi.cn 3
Loading...