Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1658
DESCRIPTION
·With TO-220F package
·Complement to type 2SC4369
·Good linearity of h
APPLICATIONS
·For general purpose applications
PINNING
PIN DESCRIPTION
FE
1
Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -0.3 A
B
Collector-base voltage Open emitter -30 V
Collector-emitter voltage Open base -30 V
Emitter-base voltage Open collector -5 V
Collector current -3 A
T
P
C
T
j
T
stg
Collector dissipation
Junction temperature 150
Storage temperature -55~150
=25℃
C
15 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1658
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
I
CBO
I
EBO
h
FE-1
h
FE-2
C
Collector-emitter breakdown voltage IC=-10mA ; IB=0 B -30 V
Collector-emitter saturation voltage IC=-2A ;IB=-0.2A B -0.3 -0.8 V
BE
Base-emitter on voltage IC=-0.5A ; VCE=-2V -0.75 -1.0 V
Collector cut-off current VCB=-20V; IE=0 -1.0 μA
Emitter cut-off current VEB=-5V; IC=0 -1.0 μA
DC current gain IC=-0.5A ; VCE=-2V 70 240
DC current gain IC=-2.5A ; VCE=-2V 25
OB
f
T
Output capacitance IE=0 ; VCB=-10V;f=1MHz 40 pF
Transition frequency IC=-0.5A ; VCE=-2V 100 MHz
h
Classifications
FE-1
O Y
70-140 120-240
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1658
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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