Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1644
DESCRIPTION
·With TO-220 package
·Fast switching speed
·Low collector saturation voltage
APPLICATIONS
·For use in switching power supplies,DC-DC
converters,motor drivers,solenoid drivers,
and other low-voltage power supply devices,
as well as for high current switching
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B Base current -3 A
B
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -7 V
Collector current -5 A
Collector current-peak PW≤300μs, duty cycle≤10% -10 A
Ta=25℃ 1.5
P
T
T
j
T
stg
Total power dissipation
T
=25℃ 35
C
W
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1644
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEsat-1
V
CEsat -2
V
BE sat -1
V
BE sat -2
I
I
h
h
h
h
Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.3 V
Collector-emitter saturation voltage IC=-4A; IB=-0.2A -0.5 V
Base-emitter saturation voltage IC=-3A; IB=-0.15A -1.2 V
Base-emitter saturation voltage IC=-4A; IB=-0.2A -1.5 V
CBO
EBO
FE-1
FE-2
FE-3
Collector cut-off current VCB=-100V; IE=0 -10 μA
Emitter cut-off current VEB=-5V; IC=0 -10 μA
DC current gain IC=-0.2A ; VCE=-2V 100
DC current gain IC=-1A ; VCE=-2V 100 400
DC current gain IC=-3A ; VCE=-2V 60
Classifications
FE-2
M L K
100-200 150-300 200-400
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1644
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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