Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1643
DESCRIPTION
·With TO-220F package
·Complement to type 2SC4327
·Low collector saturation voltage
APPLICATIONS
·For power switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
Collector-base voltage Open emitter -50 V
Collector-emitter voltage Open base -35 V
Emitter-base voltage Open collector -7 V
Collector current -7 A
T
Collector dissipation
=25℃
C
25 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1643
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
Collector-emitter breakdown voltage IC=-25mA ; IB=0 B -80 V
Emitter-base breakdown voltage IE=-1mA ; IC=0 -7 V
Collector-emitter saturation voltage IC=-5A ;IB=-0.3A B -0.5 V
Collector cut-off current VCB=-50V; IE=0 -10 μA
Emitter cut-off current VEB=-7V; IC=0 -10 μA
FE
f
T
DC current gain IC=-5A ; VCE=-2V 50
Transition frequency IE=1A ; VCE=-12V 75 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1643
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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