Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1640
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·Good linearity of h
APPLICATIONS
·For switching regulator ,driver and
power amplifier applications
PINNING
PIN DESCRIPTION
FE
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -1 A
B
Collector-base voltage Open emitter -30 V
Collector-emitter voltage Open base -30 V
Emitter-base voltage Open collector -5 V
Collector current -7 A
P
C
T
j
T
stg
Collector dissipation TC=25℃ 40 W
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1640
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
Collector-emitter breakdown voltage IC=-10mA ; IB=0 B -30 V
Collector-base breakdown voltage IC=-1mA ; IE=0 -30 V
Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V
Collector-emitter saturation voltage IC=-3A ;IB=-0.1A B -0.4 V
Base-emitter saturation voltage IC=-3A ;IB=-0.1A B -1.0 V
Collector cut-off current VCB=-30V; IE=0 -10
Emitter cut-off current VEB=-5V; IC=0 -10
FE
f
T
DC current gain IC=-0.2A ; VCE=-2V 100 300
Transition frequency IC=-0.5A ; VCE=-10V 20 MHz
μA
μA
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1640
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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