Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1633
DESCRIPTION ·
·With TO-247 package
·Complement to type 2SC4278
·High current and high power capability
APPLICATIONS
·For audio output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-247) and
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
D
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -6 V
Collector current -10 A
Total power dissipation TC=25℃ 100 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1633
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
Collector-emitter breakdown voltage IC=-25mA; IB=0 -150 V
Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -1.5 V
Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V
Collector cut-off current VCB=-150V; IE=0 -0.1 mA
Emitter cut-off current VEB=-6V; IC=0 -0.1 mA
DC current gain IC=-1A ; VCE=-5V 60 320
Transition frequency IC=-1A ; VCE=-10V 20 MHz
h
Classifications
FE
D E F
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1633
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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