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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1516
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Good Linearity of hFE
·Complement to Type 2SC3907
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(T
= -180V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
T
CBO
CEO
EBO
I
C
I
B
P
C
T
J
stg
Collector-Base Voltage -180 V
Collector-Emitter Voltage -180 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -12 A
B Base Current-Continuous -1.2 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
130 W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1516
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE(on)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
(sat)
T
Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -180 V
Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A B -3.0 V
Base-Emitter On Voltage IC= -7A ; VCE= -5V -1.5 V
Collector Cutoff Current VCB= -180V ; IE= 0 -5
Emitter Cutoff Current VEB= -5V; IC= 0 -5
μA
μA
DC Current Gain IC= -1A ; VCE= -5V 55 180
DC Current Gain IC= -7A ; VCE= -5V 35
Output Capacitance
=0 ; VCB= -10V;f
I
E
= 1.0MHz
test
470 pF
Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V 25 MHz
h
Classifications
FE-1
R O
55-110 90-180
isc Website：www.iscsemi.cn
2
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