Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1513
DESCRIPTION ·
·With TO-3PML package
·High current capability
·Low collector saturation voltage
APPLICATIONS
·For high speed and high power
switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Maximum absolute ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -60 V
Emitter-base voltage Open collector -6 V
Collector current -15 A
Ta=25℃ 3.5
Collector power dissipation
TC=25℃ 60
W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1513
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
(BR)CEO
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
Collector-emitter breakdown voltage IC=-25mA; IB=0 -60 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V
Collector-emitter saturation voltage IC=-12 A;IB=-0.6 A -0.5 V
Base-emitter saturation voltage IC=-12 A;IB=-0.6 A -1.5 V
Collector cut-off current VCB=-60V; IE=0 -10 μA
Emitter cut-off current VEB=-6V; IC=0 -10 μA
DC current gain IC=-3A ; VCE=-2V 100 400
Output capacitance IE=0 ; VCB=-10V;f=1MHz 300 pF
Transition frequency IC=-1.5A ; VCE=-10V 80 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1513
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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