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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1396
DESCRIPTION ·
·With TO-220Fa package
·Complement to type 2SC3568
·Low collector saturation voltage
·High switching speed
APPLICATIONS
·Switching regulator
·DC-DC converter
·High frequency power amplifier
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B Base current (DC) -5 A
B
P
C
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -7 V
Collector current (DC) -10 A
Collector current (pulse) -20 A
Collector power dissipation TC=25℃ 30 W
℃)
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1396
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CER
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
Collector-emitter sustaining voltage IC=-5A;IB=-0.5A;L=1mH -100 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.6 V
Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V
Collector cut-off current VCB=-100V; IE=0 -10
Collector cut-off current
Collector cut-off current
Emitter cut-off current VEB=-5V; IC=0 -10
DC current gain IC=-0.5A ; VCE=-5V 40 200
DC current gain IC=-3A ; VCE=-5V 40 200
DC current gain IC=-5A ; VCE=-5V 20
Switching times
=-100V; RBE=51Ω;
V
CE
Ta=125℃
=-100V;V
V
CE
BE(off)
Ta=125℃
=1.5V
μA
-1 mA
-0.01
-1
mA
μA
t
on
t
s
t
f
Turn-on time 0.5
=-5A ;IB1=-IB2=-0. 5A
I
Storage time 1.5
C
≈50V;RL=10Ω
V
CC
Fall time
h
Classifications
FE-2
M L K
40-80 60-120 100-200
2
μs
μs
0.5
μs
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1396
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1396
4
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