Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1389
DESCRIPTION
·With MT-200 package
·Fast switching speed
·Excellent safe operating area
APPLICATIONS
·High frequency power amplifiers
·Audio power amplifiers
·Switching regulators
·DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
Collector-base voltage Open emitter -160 V
Collector-emitter voltage Open base -160 V
Emitter-base voltage Open collector -7 V
Collector current -12 A
T
Collector power dissipation
=25℃
C
120 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1389
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
V
I
CBO
I
CEO
I
EBO
h
h
CEsat
BE
FE-1
FE-2
f
T
Collector-emitter breakdown voltage IC=-1mA ;IB=0 B -160 V
I
Emitter-base breakdown voltage
=-50μA; IC=0
E
-7 V
Collector-emitter saturation voltage IC=-5A;IB=-0.5A -1.8 V
Base-emitter voltage IC=-5A;VCE=-5V -1.7 V
Collector cut-off current VCB=-160V; IE=0 -50
μA
Collector cut-off current VCE=-160V; IB=0 -1 mA
Emitter cut-off current VEB=-7V; IC=0 -50
μA
DC current gain IC=-1A ; VCE=-5V 60 200
DC current gain IC=-7A ; VCE=-5V 40
Transition frequency IC=-1A ; VCE=-10V 30 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1389
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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