Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1388
DESCRIPTION ·
·With TO-220Fa package
·Low collector saturation voltage
·High speed switching time
·Complementary to 2SC3540
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -7 V
Collector current (DC) -5 A
Collector current (pulse) -8 A
Collector power dissipation
℃)
Ta=25℃
TC=25℃
2
W
25
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1388
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
h
C
FE-1
FE-2
f
T
ob
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V
Collector-emitter saturation voltage IC=-3A ;IB=-0.15A B -0.2 -0.4 V
Base-emitter saturation voltage IC=-3A ;IB=-0.15A B -0.9 -1.2 V
Collector cut-off current VCB=-100V; IE=0 -1
Emitter cut-off current VEB=-7V; IC=0 -1
DC current gain IC=-1A ; VCE=-1V 70 240
DC current gain IC=-3A ; VCE=-1V 30
Trainsition frequency IC=-1A ; VCE=-4V 60 MHz
Collector output capacitance IE=0; VCE=-10V;f=1MHz 200 pF
Switching times
t
on
Turn-on time 0.2
μA
μA
μs
t
s
t
f
Storage time 1.0
Fall time
h
Classifications
FE-1
O Y
70-140 120-240
I
=-IB2=-0.15A
B1
VCC=30V;RL=10Ω
0.1
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1388
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1388
4
Loading...