Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1383
DESCRIPTION
·With TO-220 package
·Complement to type 2SC3514
·High transition frequency
APPLICATIONS
·Designed for use in audio frequency
power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
P
C
C
Collector-base voltage Open emitter -180 V
Collector-emitter voltage Open base -180 V
Emitter-base voltage Open collector -5 V
Collector current -0.1 A
Ta=25℃ 1.5
Collector power dissipation
TC=25℃ 10
W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1383
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
V
I
I
h
h
C
h
Collector-emitter breakdown voltage IC=-10mA ,IB=0 -180 V
CEsat
BEsat
CBO
EBO
FE-1
FE-2
OB
f
T
Collector-emitter saturation voltage IC=-50mA; IB=-5mA -0.5 V
Base-emitter saturation voltage IC=-50mA; IB=-5mA -1.5 V
Collector cut-off current VCB=-180V; IE=0 -1.0
Emitter cut-off current VEB=-3V; IC=0 -1.0
DC current gain IC=-1mA ; VCE=-5V 90
DC current gain IC=-10mA ; VCE=-5V 100 320
Output capacitance IE=0 ; VCB=-10V;f=1MHz 4.5 pF
Transition frequency IC=-20mA ; VCE=-10V 180 MHz
Classifications
FE-2
μA
μA
Q P
100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1383
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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