Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1355
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage.
·Short switching time.
APPLICATIONS
·Various inductance lamp drivers for
electrical equipment.
·Inverters, converters
·Power amplifier
·High-speed switching
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter -70 V
Collector-emitter voltage Open base -70 V
Emitter-base voltage Open collector -5 V
Collector current -4 A
T
Collector power dissipation
Junction temperature 150
=25℃
C
30 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1355
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
Collector-base breakdown voltage IC=-1mA ,IE=0 -70 V
Collector-emitter breakdown voltage IC=-1mA ,IB=0 B -70 V
Emitter-base breakdown voltage IE=-1mA ,IC=0 -5 V
Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.5 V
Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.2 V
Collector cut-off current VCB=-40V; IE=0 -100
Emitter cut-off current VEB=-4V; IC=0 -100
μA
μA
DC current gain IC=-1A ; VCE=-2V 70 280
Transition frequency IC=-1A ; VCE=-5V 40 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1355
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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