Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1329
DESCRIPTION
·With TO-220 package
·Complement to type 2SC3346
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -2 A
B
P
C
Collector-base voltage Open emitter -80 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -6 V
Collector current -12 A
Collector power dissipation TC=25℃ 40 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1329
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
h
C
FE-1
FE-2
ob
f
T
Collector-emitter breakdown voltage IC=-50mA ,IB=0 -80 V
Collector-emitter saturation voltage IC=-6A; IB=-0.3A -0.2 -0.4 V
Base-emitter saturation voltage IC=-6A; IB=-0.3A -0.9 -1.2 V
Collector cut-off current VCB=-80V; IE=0 -10 μA
Emitter cut-off current VEB=-6V; IC=0 -10 μA
DC current gain IC=-1A ; VCE=-1V 70 240
DC current gain IC=-6A ; VCE=-1V 40
Output capacitance IE=0 ; VCB=-10V;f=1MHz 400 pF
Transition frequency IC=-1A ; VCE=-5V 50 MHz
Switching times
t
on
t
s
Turn-on time 0.3 μs
Storage time 1.0 μs
IB1=- IB2=-0.3A
RL=5Ω;VCC=-30V
t
f
Fall time
h
Classifications
FE-1
O Y
70-140 120-240
0.5 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1329
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1329
4
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