Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1308
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
I
CM
P
C
C
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -7 V
Collector current -5 A
Collector current-peak -8 A
T
Collector dissipation
=25℃
C
30 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1308
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
Collector-emitter breakdown voltage IC=-10mA ; IB=0 B -100 V
Collector-emitter saturation voltage IC=-3A;IB=-0.15A -0.4 V
Base-emitter saturation voltage IC=-3A;IB=-0.15A -1.2 V
Collector cut-off current VCB=-100V;IE=0 -1 μA
Emitter cut-off current VEB=-7V; IC=0 -1 μA
DC current gain IC=-1A ; VCE=-1V 70 240
DC current gain IC=-3A ; VCE=-1V 30
f
T
OB
Transition frequency IC=-1A ; VCE=-4V 60 MHz
Output capacitance IE=0 ; VCB=-10V;f=1MHz 200 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1308
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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