Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1293
DESCRIPTION
·With TO-220 package
·Complement to type 2SC3258
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
CBO
CEO
EBO
I
C
CM
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -7 V
Collector current -5 A
Collector current-peak -8 A
℃)
P
C
T
j
T
stg
Collector power dissipation TC=25℃ 30 W
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1293
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
h
C
FE-1
FE-2
ob
f
T
Collector-emitter breakdown voltage IC=-10mA ,IB=0 -80 V
Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.2 -0.4 V
Base-emitter saturation voltage IC=-3A; IB=-0.15A -0.9 -1.2 V
Collector cut-off current VCB=-100V; IE=0 -1
Emitter cut-off current VEB=-7V; IC=0 -1
DC current gain IC=-1A ; VCE=-1V 70 240
DC current gain IC=-3A ; VCE=-1V 30
Output capacitance IE=0 ; VCB=-10V;f=1MHz 200 pF
Transition frequency IC=-1A ; VCE=-4V 60 MHz
Switching times
t
on
Turn-on time 0.2
μA
μA
μs
t
s
t
f
Storage time 1.0
Fall time
h
Classifications
FE-1
O Y
70-140 120-240
I
=- IB2=-0.15A
B1
RL=10Ω;VCC≈30V
0.1
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1293
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1293
4
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