Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1280
DESCRIPTION
·With TO-220F package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·For use in low frequency power amplifier
Color TV vertical deflection output
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
P
T
C
C
j
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -6 V
Collector current -1.5 A
T
Collector dissipation
Junction temperature 150
=25℃
C
25 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1280
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
I
CBO
I
EBO
h
FE-1
h
FE-2
C
f
BE
T
OB
Collector-emitter breakdown voltage IC=-10mA ; IB=0 B -150 V
Collector-emitter saturation voltage IC=-500mA;IB=-50mA -3.0 V
Base-emitter on voltage IC=-50mA ; VCE=-4V -1.0 V
Collector cut-off current VCB=-120V;IE=0 -1 μA
Emitter cut-off current VEB=-6V; IC=0 -1 μA
DC current gain IC=-50mA ; VCE=-4V 60 200
DC current gain IC=-500mA ; VCE=-10V 60
Transition frequency IC=-500mA ; VCE=-10V 4 MHz
Output capacitance IE=0 ; VCB=-100V;f=1MHz 30 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1280
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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