Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1261
DESCRIPTION
·With TO-220 package
·High switching speed
·Low collector saturation voltage
·Complement to type 2SC3157
APPLICATIONS
·For high voltage ,high speed and
power switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Fig.1 simplified outline (TO-220) and symbol
ABSOLUTE MAXIMUM RATINGS (TC=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B Base current -3.5 A
B
P
T
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -7 V
Collector current -10 A
Collector current-Peak -20 A
Ta=25℃ 1.5
Total power dissipation
TC=25℃ 60
W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1261
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
(sat)
(sat)
Collector-emitter sustaining voltage IC=-5A ;IB1=-0.5A;L=1mH -100 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.6 V
Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V
Collector cut-off current VCB=-100V; IE=0 -0.01 mA
Collector cut-off current
Emitter cut-off current VEB=-5V; IC=0 -0.01 mA
DC current gain IC=-0.5A ; VCE=-5V 40 200
DC current gain IC=-3A ; VCE=-5V 40 200
DC current gain IC=-5A ; VCE=-5V 20
Switching times
t
on
Turn-on time 0.5 μs
V
=-100V; VBE=-1.5V
CE
Ta=125℃
-0.01
-1.0
mA
I
=-5A;IB1=-IB2=-0.5A ,
t
s
t
f
Storage time 1.5 μs
Fall time
C
=10Ω;VCC=-50V
R
L
h
classifications
FE-2
M L K
40-80 60-120 100-200
2
0.5 μs
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1261
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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