Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1205
DESCRIPTION
·With TO-3PN package
·High power dissipation
APPLICATIONS
·For general purpose applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -4 A
B
P
C
Collector-base voltage Open emitter -70 V
Collector-emitter voltage Open base -50 V
Emitter-base voltage Open collector -6 V
Collector current -12 A
T
Collector power dissipation
=25℃
C
100 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1205
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
Collector-emitter breakdown voltage IC=-25mA ;IB=0 -50 V
Collector-emitter saturation voltage IC=-5A; IB=-0.12A -0.5 V
Collector cut-off current VCB=-70V; IE=0 -0.1 mA
Emitter cut-off current VEB=-6V; IC=0 -0.1 mA
DC current gain IC=-5A ; VCE=-0.5V 40
Transition frequency IE=3A ; VCE=-12V 20 MHz
Switching times
t
on
t
stg
t
f
Turn-on time 0.60 μs
Storage time 0.50 μs
Fall time
=-5A;RL=4Ω
I
C
=-IB2=-0.12A
I
B1
=-20V
V
CC
0.25 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1205
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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