Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1187
DESCRIPTION
·With MT-200 package
·High current capability
APPLICATIONS
·Audio and general purpose applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
I
P
C
B
C
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -5 V
Collector current -12 A
Base current -2 A
T
Collector power dissipation
=25℃
C
120 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1187
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
C
FE
f
ob
T
Collector-emitter breakdown voltage IC=-25mA ;IB=0 -150 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V
Collector cut-off current VCB=-150V; IE=0 -0.1 mA
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
DC current gain IC=-3A ; VCE=-4V 50
Output capacitance IE=0 ; VCB=-80V;f=1MHz 110 pF
Transition frequency IE=1A ; VCE=-12V 60 MHz
h
Classifications
FE
O P Y
50-100 70-140 90-180
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1187
PACKAGE OUTLINE
Fig.2 outline dimensions
3
Loading...