Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1185
DESCRIPTION
·With TO-3PN package
·High current capability
·Low collector saturation voltage
APPLICATIONS
·High power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
I
CM
I
BM
C
Collector-base voltage Open emitter -50 V
Collector-emitter voltage Open base -50 V
Emitter-base voltage Open collector -5 V
Collector current -7 A
Collector current-peak -15 A
Base current-peak -5 A
P
C
T
j
T
stg
Collector power dissipation TC=25℃ 60 W
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1185
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
I
I
h
h
h
Collector-emitter breakdown voltage IC=-0.1A ;IB=0 -50 V
CEsat
V
BE
CBO
EBO
FE-1
FE-2
C
ob
f
T
FE-1
Collector-emitter saturation voltage IC=-7A; IB=-0.7A -0.8 V
Base-emitter on voltage IC=-7A ; VCE=-5V -1.5 V
Collector cut-off current VCB=-50V; IE=0 -1 mA
Emitter cut-off current VEB=-5V; IC=0 -2 mA
DC current gain IC=-1A ; VCE=-5V 60 320
DC current gain IC=-7A ; VCE=-5V 20
Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF
Transition frequency IC=-0.5A ; VCE=-5V 100 MHz
Classifications
Q P O
60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1185
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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