Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1180
DESCRIPTION
·With TO-3 package
·High power dissipations
APPLICATIONS
·For power switching amplifier and
general purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -4 A
B
Collector-base voltage Open emitter -180 V
Collector-emitter voltage Open base -180 V
Emitter-base voltage Open collector -6 V
Collector current -10 A
P
C
T
j
T
stg
Collector power dissipation TC=25℃ 100 W
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1180
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V
Collector-base breakdown voltage IC=-1mA ;IE=0 -180 V
Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V
Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V
Collector cut-off current VCB=-180V; IE=0 -0.1 mA
Emitter cut-off current VEB=-6V; IC=0 -0.1 mA
FE
DC current gain IC=-5A ; VCE=-4V 30
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1180
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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