Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1125
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2633
·High breakdown voltage
APPLICATIONS
·For audio frequency high voltage
amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
I
CM
P
C
C
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -5 V
Collector current -50 mA
Collector current-peak -100 mA
T
Collector power dissipation
=25℃
C
1.5 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1125
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
Collector-emitter breakdown voltage IC=-0.1mA ,IB=0 B -150 V
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=-30mA; IB=-3mA -1.0 V
Collector cut-off current VCB=-100V; IE=0 -1
Emitter cut-off current VEB=-4V; IC=0 -1
DC current gain IC=-10mA ; VCE=-5V 90 450
Output capacitance IE=0 ; VCB=-10V;f=1MHz 5 pF
Transition frequency IC=-10mA ; VCE=-10V 200 MHz
hFE Classifications
Q R S T
I
=-10μA ,IC=0
E
-5 V
μA
μA
90-155 130-220 185-330 260-450
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1125
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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