Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1079
DESCRIPTION
·With TO-220 package
·High transition frequency
·Excellent safe operating area
APPLICATIONS
·High-frequency power amplifier
·Audio power amplifiers and drivers
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter -160 V
Collector-emitter voltage Open base -160 V
Emitter-base voltage Open collector -5 V
Collector current -2 A
Collector power dissipation TC=25℃ 25 W
Junction temperature 150 ℃
T
stg
Storage temperature -65~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1079
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
=-1mA ,RBE=∞
C
I
=-1μA ,IE=0
C
I
=-1μA ,IC=0
E
-160 V
-160 V
-5 V
V
h
h
CEsat
V
BE
I
CBO
I
CEO
I
EBO
FE-1
FE-2
f
T
C
OB
Collector-emitter saturation voltage IC=-0.7A; IB=-70mA -0.45 -1.0 V
Base-emitter on voltage IC=-0.7A ; VCE=-5V -0.8 -1.7 V
Collector cut-off current VCB=-160V; IE=0 -1
Collector cut-off current VCE=-160V; IB=0 -100
Emitter cut-off current VEB=-5V; IC=0 -1
μA
μA
μA
DC current gain IC=-0.3A ; VCE=-5V 100 350
DC current gain IC=-0.7A ; VCE=-5V 50
Transition frequency IC=-0.5A ; VCE=-10V;f=10MHz 120 MHz
Output capacitance IE=0 ; VCB=-20V;f=1MHz 100 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1079
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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