Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1077
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2527
·High transition frequency
·Excellent safe operating area
APPLICATIONS
·High-frequency power amplifier
·Audio power amplifiers
·Switching regulators
·DC-DC converters
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
Collector-base voltage Open emitter -120 V
Collector-emitter voltage Open base -120 V
Emitter-base voltage Open collector -7 V
Collector current -10 A
Collector power dissipation TC=25℃ 60 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1077
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
=-1mA ,RBE=∞
C
I
=-50μA ,IE=0
C
I
=-50μA ,IC=0
E
-120 V
-120 V
-7 V
V
h
h
CEsat
V
BE
I
CBO
I
CEO
I
EBO
FE-1
FE-2
f
T
C
OB
Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.9 -1.8 V
Base-emitter on voltage IC=-5A ; VCE=-5V -1.25 -1.7 V
Collector cut-off current VCB=-120V; IE=0 -50
Collector cut-off current VCE=-120V; IB=0 -1 mA
Emitter cut-off current VEB=-7V; IC=0 -50
DC current gain IC=-1A ; VCE=-5V 60 200
DC current gain IC=-5A ; VCE=-5V 40
Transition frequency IC=-1A ; VCE=-10V;f=10MHz 30 60 MHz
Output capacitance IE=0 ; VCB=-10V;f=1MHz 300 470 pF
Switching times
μA
μA
t
r
t
stg
t
f
Rise time 0.15
I
=-7.5A; RL=4Ω
Storage time 0.5
C
=-IB2=-0.75A;
I
B1
Fall time
2
0.11
μs
μs
μs
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1077
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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