Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1074
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
APPLICATIONS
·For high power audio ,stepping
motor and other linear applications
·Relay or solenoid drviers
·DC-DC converters inverters
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -7 A
B
P
C
T
j
Collector-base voltage Open emitter -160 V
Collector-emitter voltage Open base -160 V
Emitter-base voltage Open collector -7 V
Collector current -15 A
T
Collector power dissipation
Junction temperature 150
=25℃
C
150 W
℃
T
stg
Storage temperature -65~200
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal resistance junction to case 0.98
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1074
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
I
CEO
I
CEV
I
EBO
h
FE-1
h
FE-2
BE
Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -160 V
Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.1 V
Collector-emitter saturation voltage IC=-10A; IB=-3.3A -3.0 V
Base-emitter on voltage IC=-4A ; VCE=-4V -1.8 V
Collector cut-off current VCE=-60V; V
=Rated Value; V
V
Collector cut-off current
CE
TC=150℃
=0 -0.1 mA
BE(off)
BE(off)
=1.5V
-1.0
-6.0
mA
Emitter cut-off current VEB=-7V; IC=0 -0.1 mA
DC current gain IC=-4A ; VCE=-4V 20
DC current gain IC=-10A ; VCE=-4V 5
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1074
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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