Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1063
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High transition frequency
APPLICATIONS
·Designed for general purpose switching
and amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -6 V
Collector current -6 A
Collector current-peak -10 A
T
Collector power dissipation
=25℃
C
80 W
T
j
T
stg
Junction temperature 150
Storage temperature -65~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1063
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
V
I
I
h
h
h
Collector-emitter breakdown voltage IC=-25mA ;IB=0 -150 V
CEsat
BE
CBO
EBO
FE-1
FE-2
f
T
Collector-emitter saturation voltage IC=-4A ;IB=-0.4A B -2.0 V
Base-emitter on voltage IC=-4A;VCE=-5V -1.8 V
Collector cut-off current VCB=-150V; IE=0 -50
Emitter cut-off current VEB=-3V; IC=0 -50
DC current gain IC=-1A ; VCE=-5V 40 280
DC current gain IC=-4A ; VCE=-5V 20
Transition frequency IC=-0.5A ; VCE=-5V 50 MHz
Classifications
FE-1
μA
μA
R Q P O
40-80 60-120 90-180 140-280
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1063
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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