Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1060
DESCRIPTION
·With TO-3PN package
·Complement to type 2SC2484
·High collector power dissipation
APPLICATIONS
·High power audio frequency amplifier
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter -80 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -6 V
Collector current (DC) -5 A
Collector current-peak -8 A
T
Collector power dissipation
=25℃
C
60 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1060
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
V
I
I
h
h
h
h
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V
CEsat
BE
CBO
EBO
FE-1
FE-2
FE-3
f
T
FE-2
Collector-emitter saturation voltage IC=-3A ;IB=-0.3A B -2.0 V
Base-emitter on voltage IC=-3A;VCE=-5V -1.8 V
Collector cut-off current VCB=-80V; IE=0 -50 μA
Emitter cut-off current VEB=-3V; IC=0 -50 μA
DC current gain IC=-20mA ; VCE=-5V 20
DC current gain IC=-1A ; VCE=-5V 40 200
DC current gain IC=-3A ; VCE=-5V 20
Transition frequency IC=-0.5A ; VCE=-5V 20 MHz
Classifications
R Q P
40-80 60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1060
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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