Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1051
DESCRIPTION
·With TO-3 package
·High transition frequency
·Excellent safe operating area
APPLICATIONS
·For audio and general purpose
power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current -1.5 A
B
Collector-base voltage Open emitter -150 V
Collector-emitter voltage Open base -150 V
Emitter-base voltage Open collector -5 V
Collector current -15 A
T
P
C
T
j
T
stg
Collector power dissipation
Junction temperature 175
Storage temperature -55~200
=25℃
C
150 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1051
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
I
CBO
I
EBO
h
FE-1
h
FE-2
BE
Collector-emitter breakdown voltage IC=-25mA ;IB=0 -150 V
Collector-base breakdown voltage IC=-1mA ;IE=0 -150 V
Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V
Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V
Base-emitter on voltage IC=-8A ; VCE=-5V -1.5 V
Collector cut-off current VCB=-140V; IE=0 -10
Emitter cut-off current VEB=-5V; IC=0 -10
μA
μA
DC current gain IC=-1A ; VCE=-5V 55 160
DC current gain IC=-8A ; VCE=-5V 35
f
T
Transition frequency IC=-1A ; VCE=-10V 60 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1051
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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