Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1044
DESCRIPTION
·With TO-3 package
·High transition frequency
·Excellent safe operating area
APPLICATIONS
·Power switching applications
·High frequency power amplifier
·Switching regulators
·DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter -70 V
Collector-emitter voltage Open base -70 V
Emitter-base voltage Open collector -7 V
Collector current -30 A
T
Collector power dissipation
Junction temperature 175
=25℃
C
150 W
℃
T
stg
Storage temperature -55~200
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1044
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
C
FE
OB
Collector-emitter breakdown voltage IC=-10mA ;IB=0 -70 V
Collector-base breakdown voltage IC=-0.1mA ;IE=0 -70 V
Emitter-base breakdown voltage IE=-0.1mA ;IC=0 -7 V
Collector-emitter saturation voltage IC=-15A; IB=-1.5A -1.5 V
Base-emitter saturation voltage IC=-15A; IB=-1.5A -2.0 V
Collector cut-off current VCB=-70V; IE=0 -50
Emitter cut-off current VEB=-7V; IC=0 -50
μA
μA
DC current gain IC=-3A ; VCE=-5V 35 200
Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 700 pF
f
T
Transition frequency IC=-2A ; VCE=-10V 60 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1044
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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