Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1006
DESCRIPTION
·Good Linearity of h
·High Collector-Emitter Breakdown Voltage-
V
(BR)CEO
·Wide Area of Safe Operation
·Complement to Type 2SC2336
APPLICATIONS
·Adudio frequency power amplifier
·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25
FE
= -180Vdc (Min)
℃)
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage -180 V
Collector-Emitter Voltage -180 V
Emitter-Base Voltage -5.0 V
Collector Current-Continuous -1.5 A
Collector Current-Peak -3.0 A
Collector Power Dissipation@ Ta=25℃ 1.5
W
Total Power Dissipation@ TC=25℃ 25
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1006
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE(sat)
V
BE(sat)
I
I
h
h
C
h
Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V
Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V
CBO
EBO
FE-1
FE-2
f
OB
T
FE-2
Collector Cutoff Current VCB= -150V; IE= 0 -1.0 μA
Emitter Cutoff Current VEB= -3.0V; IC=0 -1.0 μA
DC Current Gain IC= -5mA ; VCE= -5V 30
DC Current Gain IC= -150mA ; VCE= -5V 60 320
Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V 80 MHz
Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 45 pF
Classifications
R Q P
60-120 100-200 160-320
isc Website：www.iscsemi.cn
2
Page 3
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1006
isc Website：www.iscsemi.cn 3
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