Datasheet 2N720A Datasheet (SGS Thomson Microelectronics)

HIGH VOLTAGE GENERAL PURPOSE

DESCRI PTIO N

The 2N720A is a silicon planarepitaxial NPN tran­sistorinJedec TO-18 metal case. It is suitable for a
wide variety of amplifier and switchingapplications.

2N720A

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTEMAXIMUMRATINGS

Symbol Parameter Value Unit

V

CBO

V

CEO

V

EBO

I

P

T

stg,Tj

C

tot

Collector-base Voltage (IE=0) 120 V
Collector–emitter Voltage (IR=0) 80 V
Emitter–base Voltage (IC=0) 7 V
Collector Current 500 mA
Total Power Dissipation at T

at T

Storage and Junction Temperature – 65 to 200 °C

amb
case

≤ 25 °C

≤ 25 °C

0.5

1.8

W
W

October 1988

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2N720A

THERMAL DATA

R

th j-case

R

th j-amb

ELECTRICAL CHARACTERISTICS(T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient

=25°C unless otherwise specified)

amb

Max
Max

97.2
350

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

Collector Cutoff Current

VCB=90V 10 nA

(IE=0)

V

(BR)CBO

Collector–base Breakdown

=100µA 120 V

I

C

Voltage
(I

=0)

E

V

(BR)CEO

* Collector–emitter Breakdown

=30mA 80 V

I

C

Voltage
(I

=0)

B

V

(BR)EB O

Emitter–base Breakdown

=100µA7 V

I

E

Voltage
(I

=0)

E

I

EBO

Emitter Cuttoff Current

VEB=5V 10 nA

(IE=0)

V

V

* Collector–emitter Saturation

CE(sat)

Voltage

* Base–emitter Saturation

BE(sat)

Voltage

h

* DC Current Gain IC=100µA

FE

IC=50mA
I

C

IC=50mA
I

C

IC=10mA
IC=150mA

h

fe

C

CBO

High Frequency Current
Gain

IC=50mA
f=20MHz

Collector–base Capacitance IE=0

=150mA

=150mA

=5mA

I

B

I

=15mA

B

=5mA

I

B

I

=15mA

B

VCE=10V
VCE=10V
VCE=10V

20
35
40 120

1.2
5

0.9

1.3

VCE= 10 V 2.5 –

VCB=10V 15 pF

f = 1 MHz

C

EBO

Emitter–base Capacitance IC=0

VEB= 0.5 V 85 pF

f = 1 MHz

* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.

°C/W
°C/W

V
V

V
V

–
–
–

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TO-18 MECHANICAL DATA

2N720A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 5.3 0.208

E 4.9 0.193

F 5.8 0.228

G 2.54 0.100

H 1.2 0.047

I 1.16 0.045

L45

o

mm inch

o

45

G

I

H

DA

F

E

L

B

C

0016043

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2N720A

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder anypatent or patent rights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascriticalcomponents in life supportdevicesor systemswithout express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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