Datasheet 2N720A Datasheet (SGS Thomson Microelectronics)

Page 1
HIGH VOLTAGE GENERAL PURPOSE
DESCRI PTIO N
The 2N720A is a silicon planarepitaxial NPN tran­sistorinJedec TO-18 metal case. It is suitable for a wide variety of amplifier and switchingapplications.
2N720A
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTEMAXIMUMRATINGS
V
CBO
V
CEO
V
EBO
I
P
T
stg,Tj
C
tot
Collector-base Voltage (IE=0) 120 V Collector–emitter Voltage (IR=0) 80 V Emitter–base Voltage (IC=0) 7 V Collector Current 500 mA Total Power Dissipation at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb case
25 °C
25 °C
0.5
1.8
W W
October 1988
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2N720A
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS(T
Thermal Resistance Junction-case Thermal Resistance Junction-ambient
=25°C unless otherwise specified)
amb
Max Max
97.2 350
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cutoff Current
VCB=90V 10 nA
(IE=0)
V
(BR)CBO
Collector–base Breakdown
=100µA 120 V
I
C
Voltage (I
=0)
E
V
(BR)CEO
* Collector–emitter Breakdown
=30mA 80 V
I
C
Voltage (I
=0)
B
V
(BR)EB O
Emitter–base Breakdown
=100µA7 V
I
E
Voltage (I
=0)
E
I
EBO
Emitter Cuttoff Current
VEB=5V 10 nA
(IE=0)
V
V
* Collector–emitter Saturation
CE(sat)
Voltage
* Base–emitter Saturation
BE(sat)
Voltage
h
* DC Current Gain IC=100µA
FE
IC=50mA I
C
IC=50mA I
C
IC=10mA IC=150mA
h
fe
C
CBO
High Frequency Current Gain
IC=50mA f=20MHz
Collector–base Capacitance IE=0
=150mA
=150mA
=5mA
I
B
I
=15mA
B
=5mA
I
B
I
=15mA
B
VCE=10V VCE=10V VCE=10V
20 35 40 120
1.2 5
0.9
1.3
VCE= 10 V 2.5
VCB=10V 15 pF
f = 1 MHz
C
EBO
Emitter–base Capacitance IC=0
VEB= 0.5 V 85 pF
f = 1 MHz
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
°C/W °C/W
V V
V V
– – –
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TO-18 MECHANICAL DATA
2N720A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o
mm inch
o
45
G
I
H
DA
F
E
L
B
C
0016043
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2N720A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license isgranted byimplication or otherwiseunder anypatent or patent rights ofSGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascriticalcomponents in life supportdevicesor systemswithout express written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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