Datasheet 2n7002ka Datasheet

2N7002KA

N-channel TrenchMOS FET

Rev. 03 — 25 February 2008 Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.

1.2 Features

n Logic level compatible n Very fast switching
n Subminiature surface-mounted package n Gate-source ElectroStatic Discharge

1.3 Applications

n Relay driver n High-speed line driver

(ESD) protection diodes

1.4 Quick reference data

n VDS≤ 60 V n ID≤ 320 mA
n R

≤ 4.4 Ω n P

DSon

≤ 0.83 W

tot

2. Pinning information

Table 1. Pinning

Pin Description Simplified outline Symbol

1 gate (G)
2 source (S)
3 drain (D)

12

SOT23 (TO-236AB)

3

D

G

S

003aac036

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

3. Ordering information

Table 2. Ordering information

Type number Package

Name Description Version

2N7002KA TO-236AB plastic surface-mounted package; 3 leads SOT23

4. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

V

GSM

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage 25 °C ≤ Tj≤ 150 °C - 60 V
drain-gate voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ -60V
gate-source voltage - ±15 V
peak gate-source voltage tp≤ 50 µs; pulsed; duty cycle = 25 % - ±40 V
drain current Tsp=25°C; VGS= 10 V; see Figure 2 and 3 - 320 mA

= 100 °C; VGS= 10 V; see Figure 2 - 200 mA

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; see Figure 3 - 1.28 A
total power dissipation Tsp=25°C; see Figure 1 - 0.83 W
storage temperature −55 +150 °C
junction temperature −55 +150 °C

source current Tsp=25°C - 300 mA
peak source current Tsp=25°C; pulsed; tp≤ 10 µs - 1.2 A

2N7002KA_3 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 03 — 25 February 2008 2 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

120

P

der

(%)

80

40

0

0 20015050 100

P

der

----------------------- -

P

tot 25°C()

P

tot

100 %×= I

003aab946

Tsp (°C)

Fig 1. Normalized total power dissipation as a

function of solder point temperature

10

120

I

der

( %)

80

40

0

0 20015050 100

I

--------------------

der

I

D25°C()

D

100 %×=

003aac033

Tsp (°C)

Fig 2. Normalized continuous drain current as a

function of solder point temperature

003aab788

I

D

(A)

Limit R

1

-1

10

-2

10

1 10 10

DSon

= VDS / I

D

DC

VDS (V)

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

Tsp=25°C; IDM is single pulse

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

2

2N7002KA_3 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 03 — 25 February 2008 3 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

5. Thermal characteristics

Table 4. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

R

th(j-a)

[1] Mounted on a printed-circuit board; minimum footprint; vertical in still air.

thermal resistance from junction to solder point see Figure 4 - - 150 K/W
thermal resistance from junction to ambient

[1]

- 350 - K/W

3

10

Z

th(j-sp)

(K/W)

2

10

δ =

0.5

0.2

10

1

0.1

0.05

0.02
single pul se

-5

10

-4

10

-3

10

-2

10

-1

10

P

t

p

T

1 10

t

(s)

p

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

003aab351

t

p

δ =

T

t

2N7002KA_3 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 03 — 25 February 2008 4 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

6. Characteristics

Table 5. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown
voltage

V

(BR)GSS

gate-source breakdown
voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS; see Figure 9 and 10

drain leakage current VDS=48V; VGS=0V

gate leakage current VGS= ±10 V; VDS= 0 V - 50 500 nA
drain-source on-state

resistance

Dynamic characteristics

C

iss

C

oss

C

rss

t

on

t

off

input capacitance VGS=0V; VDS= 10 V; f = 1 MHz;
output capacitance - 8 30 pF
reverse transfer capacitance - 4 10 pF
turn-on time VDS=50V; RL= 250 Ω; VGS=10V;
turn-off time - 9 15 ns

Source-drain diode

V

SD

t

rr

Q

r

source-drain voltage IS= 300 mA; VGS= 0 V; see Figure 11 - 0.85 1.5 V
reverse recovery time IS= 300 mA; dIS/dt = −100 A/µs; VGS=0V;
recovered charge - 30 - nC

ID=10µA; VGS=0V

=25°C 6075- V

T

j

= −55 °C 55--V

T

j

IG= ±1 mA; VDS= 0 V 16 22 - V

=25°C 12- V

T

j

= 150 °C 0.6 - - V

T

j

= −55 °C - - 3.5 V

T

j

=25°C - 0.01 1 µA

T

j

= 150 °C --10µA

T

j

VGS= 10 V; ID= 500 mA; see Figure 6 and 8

=25°C - 2.8 4.4 Ω

T

j

= 150 °C - - 8.14 Ω

T

j

= 4.5 V; ID= 75 mA; see Figure 6 and 8 - 3.8 5.3 Ω

V

GS

- 1340pF

see

Figure 12

- 3 10 ns

R

=50Ω; RGS=50Ω

G

-30-ns

V

=25V

DS

2N7002KA_3 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 03 — 25 February 2008 5 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

1

I

D

(A)

0.8

0.6

0.4

0.2

0

01234

10

003aab352

4.5

3.5VGS (V) =

(V)

V

DS

5

4

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

003aab354

(A)

1

I

D

0.8

10000

R

DSon

(mΩ)

8000

6000

4000

2000

0

0 0.2 0.4 0.6 0.8 1

=25°C

j

VGS (V) =

4

003aab353

4.5

5

10

(A)

I

D

Fig 6. Drain-source on-state resistance as a function

of drain current; typical values

2.4

a

1.8

003aac034

0.6

0.4

0.2

0

0246

Tj = 150 °C

Tj=25°C and 150 °C; VDS>ID× R

25 °C

V

GS

DSon

(V)

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

1.2

0.6

0

−60 180120060

R

DSon

=

a

----------------------------- -

R

DSon 25°C()

Tj (°C)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature

2N7002KA_3 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 03 — 25 February 2008 6 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

3

V

GS(th)

(V)

2

1

0

-60 0 60 120 180

ID= 1 mA; VDS=V

max

typ

min

GS

003aab101

T

(°C)

j

Fig 9. Gate-source threshold voltage as a function of

junction temperature

003aab356

(A)

1

I

S

0.8

-3

10

I

D

(A)

-4

10

-5

10

-6

10

0123

min typ max

003aab100

V

(V)

GS

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

003aac035

C

(pF)

2

10

0.6

0.4

0.2

0

0.2 0.4 0.6 0.8 1

150 °C

Tj = 25 °C

(V)

V

SD

Tj=25°C and 150 °C; VGS=0V VGS= 0 V; f = 1 MHz

Fig 11. Source current as a function of source-drain

voltage; typical values

C

iss

10

C

oss

C

rss

1

−1

10

101

VDS (V)

2

10

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values

2N7002KA_3 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 03 — 25 February 2008 7 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

7. Package outline

Plastic surface-mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE

VERSION

SOT23 TO-236AB

1

A

max.

0.1

cD

b

p

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

e

0.95

H

L

Qwv

1

2.5

2.1

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

Fig 13. Package outline SOT23 (TO-236AB)

2N7002KA_3 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 03 — 25 February 2008 8 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

8. Revision history

Table 6. Revision history

Document ID Release date Data sheet status Change notice Supersedes

2N7002KA_3 20080225 Product data sheet - 2N7002KA_2
Modifications:
2N7002KA_2 20070925 Product data sheet 2N7002KA_1
2N7002KA_1 20070605 Product data sheet - -

• The value for I

in Section 1.4 was updated.

D

2N7002KA_3 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 03 — 25 February 2008 9 of 11

NXP Semiconductors

9. Legal information

9.1 Data sheet status

2N7002KA

N-channel TrenchMOS FET

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] Theproduct statusof device(s) described in this document may have changed since this document was published and may differin caseof multiple devices. Thelatest product status

information is available on the Internet at URL

[1][2]

Product status

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall haveno liability forthe consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s)and title. Ashort datasheet is intended
for quickreference only and should notbe relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not giveany representations or
warranties, expressed or implied,as to the accuracy or completenessof such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This documentsupersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134) maycause permanent
damage to thedevice. Limiting valuesare stress ratings onlyand operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implicationof any license under any copyrights,patents
or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

9.4 Trademarks

Notice: Allreferenced brands,product names, service namesand trademarks
are the property of their respective owners.

TrenchMOS —is a trademark of NXP B.V.

10. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

2N7002KA_3 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 03 — 25 February 2008 10 of 11

NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Contact information. . . . . . . . . . . . . . . . . . . . . 10

11 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2N7002KA

N-channel TrenchMOS FET

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 25 February 2008

Document identifier: 2N7002KA_3