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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6933/34/35
DESCRIPTION
·High Switching Speed
·High Voltage
APPLICATIONS
·Off-line power supplies
·High voltage inverters
·Switching regulators
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
V
CEV
Collector-Emitter
Voltage (V
= -1.5V)
BE
=25℃)
a
2N6933 450
2N6934 550
2N6935 650
V
2N6933 350
V
CEX
Collector-Emitter
Voltage
2N6934 400
2N6935 450
2N6933 300
V
CEO
Collector-Emitter
Voltage
2N6934 350
2N6935 400
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
C
T
J
Emitter-Base Voltage 8 V
Collector Current-Continuous 15 A
Collector Current-Peak 23 A
B Base Current-Continuous 5 A
Base Current-Peak 7 A
Emitter Current-Continuous 20 A
Emitter Current-Peak 30 A
Collector Power Dissipation
@ TC=25℃
175 W
Junction Temperature 150
V
V
℃
T
stg
Storage Temperature Range -65~150
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance, Junction to Case 0.71
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6933/34/35
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
2N6933 300
V
CEO(SUS)
V
(BR)EBO
V
CE(sat)
V
BE(sat)
I
CEV
I
EBO
h
C
FE
OB
Collector-Emitter
Sustaining Voltage
Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 8 V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current VEB= 8V; IC=0 2.0 mA
DC Current Gain IC= 15A ; VCE= 3V 8 35
Output Capacitance
Switching Times; Resistive Load
I
2N6934 350
2N6935
= 0.2A ;L= 25mH
C
= 15A; IB= 3A
I
C
= 15A; IB= 3A; TC= 100℃
I
C
= 15A; IB= 3A
I
C
= 15A; IB= 3A; TC= 100℃
I
C
= V
V
CE
V
CE
= 0;VCB= 10V,f
I
E
; VBE= -1.5V
CEV
= V
; VBE= -1.5V; TC= 100℃
CEV
= 1.0MHz
test
400
150 pF
V
1.0
2.0
1.5
1.5
0.1
1.0
V
V
mA
t
d
t
r
t
s
t
f
Delay Time 0.1
Rise Time 0.7
I
= 15A; IB1= -IB2= 3A; RL= 20Ω;
C
= -5V; VCC= 300V; tp= 30μs
V
Storage Time 2.5
Fall Time
BB
0.5
isc Website：www.iscsemi.cn
2
μs
μs
μs
μs
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