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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6837
DESCRIPTION
· Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 450V(Min)
=25℃)
a
V
CEV
V
CEO(SUS)
V
EBO
I
I
CM
I
I
BM
P
T
T
C
B
stg
Collector-Emitter Voltage 850 V
Collector-Emitter Voltage 450 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 20 A
Collector Current-Peak 30 A
B Base Curr ent-Continuous 15 A
Base Current-Peak 20 A
Collector Power Dissipation@TC=25℃ 250 W
C
Junction Temperature 200 ℃
J
Storage Temperature -65~200
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 0.7
℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6837
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)-
V
CE
(sat)-
V
BE
I
CEV
I
CER
I
EBO
h
FE-1
h
FE-2
f
C
(sat)
T
OB
Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 450 V
Collector-Emitter Saturation Voltage IC= 10A; IB= 1.2A 1.0 V
1
= 15A; IB= 2A
Collector-Emitter Saturation Voltage
2
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
I
C
= 15A; IB= 2A,TC=100℃
I
C
= 15A; IB= 2A
I
C
IC= 15A; IB= 2A,TC=100℃
V
=850V;V
CEV
V
=850V;V
CEV
V
= 850V; RBE= 50Ω,TC= 100℃
CE
= 1.5V
BE
(off)
= 1.5V;TC=100℃
BE
(off)
2.5 mA
3.0
3.0
1.5
1.5
0.25
1.5
V
V
mA
Emitter Cutoff Current VEB= 6.0V; IC=0 1.0 mA
DC Current Gain IC= 15A ; VCE= 5V 7.5 30
DC Current Gain IC= 20A ; VCE= 5V 5
Current Gain-Bandwidth Product
Output Capacitance
= 0.25A ;VCE= 10V; f
I
C
= 0; VCB= 10V; f
I
E
=1.0kHz
test
=10MHz
test
10 75 MHz
100 500 pF
Switching times;Resistive Load
t
d
t
r
t
s
t
f
Delay Time 0.02 0.1 μs
Rise Time 0.2 0.5 μs
Storage Time 1.2 2.7 μs
Fall Time
= 15A , VCC= 250V;
I
C
I
= 2A; IB2= -4A;
B1
PW= 30μs; RB2= 1.6Ω
Duty Cycle≤2.0%
0.2 0.35 μs
isc Website：www.iscsemi.cn
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