Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6834
DESCRIPTION
· Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 450V(Min)
=25℃)
a
V
CEV
V
CEO(SUS)
V
EBO
I
I
CM
I
I
BM
P
T
T
C
B
stg
Collector-Emitter Voltage 850 V
Collector-Emitter Voltage 450 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
B Base Curr ent-Continuous 4 A
Base Current-Peak 8 A
Collector Power Dissipation@TC=25℃ 125 W
C
Junction Temperature 200 ℃
J
Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.4 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6834
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)-
V
CE
(sat)-
V
BE
I
CEV
I
CER
I
EBO
h
FE-1
h
FE-2
f
C
(sat)
T
OB
Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 450 V
Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A 1.0 V
1
= 3A; IB= 0.4A B
Collector-Emitter Saturation Voltage
2
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
I
C
= 3A; IB= 0.4A,TB
I
C
= 3A; IB= 0.4A B
I
C
IC= 3A; IB= 0.4A,TB
= 850V;V
V
CEV
V
= 850V;V
CEV
V
= 850V; RBE= 50Ω,TC= 100℃
CE
=100℃
C
=100℃
C
= 1.5V
BE(off)
= 1.5V;TC=100℃
BE(off)
2.5 mA
2.5
2.5
1.5
1.5
0.25
1.5
V
V
mA
Emitter Cutoff Current VEB= 6.0V; IC=0 1.0 mA
DC Current Gain IC= 3A ; VCE= 5V 7.5 30
DC Current Gain IC= 5A ; VCE= 5V 5
Current Gain-Bandwidth Product
Output Capacitance
= 0.25A ;VCE= 10V; f
I
C
= 0; VCB= 10V; f
I
E
=1.0kHz
test
=10MHz
test
15 75 MHz
20 200 pF
Switching times;Resistive Load
t
d
t
r
t
s
t
f
Delay Time 0.03 0.1 μs
Rise Time 0.1 0.3 μs
Storage Time 1.0 3.0 μs
Fall Time
= 3A , VCC= 250V;
I
C
I
= 0.4A; IB2= -0.8A;
B1
PW= 30μs; RB2= 8Ω
Duty Cycle≤2.0%
0.06 0.3 μs
isc Website：www.iscsemi.cn
2
Loading...