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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6704
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for converters, inverters, pulse-width-modulated
regulators and a variety of power switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
= 130V(Min)
SYMBOL PARAMETER VALUE UNIT
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
stg
Collector-Emitter Voltage-VBE= -1.5V 180 V
Collector-Emitter Voltage 130 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 7 A
Collector Current-Peak 10 A
B Base Current-Continuous 5 A
Collector Power Dissipation
C
j
=25℃
T
C
Junction Temperature 150 ℃
Storage Ttemperature Range -65~150 ℃
50 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 2.5 ℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N6704
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
I
CEV
I
EBO
h
FE-1
h
FE-2
C
f
(sat)
OB
T
Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 130 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 0.7 V
Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A B 1.5 V
Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.4 V
Collector Cutoff Current
Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA
DC Current Gain IC= 0.2A ; VCE= 2V 30
DC Current Gain IC= 4A ; VCE= 2V 20
Output Capacitance
Current-Gain—Bandwidth Product
Switching Times
V
= 180V;VBE=-1.5V
CEV
= 180V;VBE=-1.5V;TJ= 125℃
V
CEV
I
= 0; VCB= 10V, f
E
I
= 0.5A; VCE= 10V, f
C
= 0.1MHz
test
test
= 1MHz
0.1
1.0
mA
50 150 pF
50 200 MHz
t
d
t
r
t
s
t
f
Delay Time 0.1 μs
Rise Time 0.25 μs
Storage Time 1 μs
Fall Time
isc Website：www.iscsemi.cn
IC= 4A; IB1= -IB2= 0.4A,VBE= -4V
0.5 μs
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