Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors 2N6497/6498/6499
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
·DC Current Gain : h
FE
APPLICATIONS
·Designed for high voltage inverters, switching regulators
and line operated amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 250V(Min)- 2N6497
= 300V(Min)- 2N6498
= 350V(Min)- 2N6499
= 10-75@IC= 2.5A
=25℃)
a
2N6497 350
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 6 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
B Base Current 2 A
Total Power Dissipation@TC=25℃ 80 W
D
Junction Temperature 150 ℃
j
Storage Temperature -65~150 ℃
2N6498 400
2N6499 450
2N6497 250
2N6498 300
2N6499 350
V
V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Rresistance,Junction to Case 1.56
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors 2N6497/6498/6499
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
2N6497 250
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CEX
Collector-Emitter
Sustaining Voltage
2N6498 300
2N6499
IC= 25mA; IB= 0
V
350
2N6497 1.0
Collector-Emitter
Saturation Voltage
2N6498 1.25
2N6499
I
= 2.5A; IB= 0.5A
C
V
1.5
Collector-Emitter Saturation Voltage IC= 5A; IB= 2A B 5.0 V
Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 2A B 2.5 V
Collector
Cutoff Current
2N6497
2N6498
2N6499
VCE= 350V;V
V
= 175V;V
CE
VCE= 400V;V
V
= 200V;V
CE
= 450V;V
V
CE
VCE= 225V;V
= 1.5V
BE(
)
off
= 1.5V ;TC=100℃
BE(
)
off
= 1.5V
BE(
)
off
= 1.5V ;TC=100℃
BE(
)
off
= 1.5V
BE(
)
off
= 1.5V ;TC=100℃
BE(
)
off
1.0
10
1.0
10
mA
1.0
10
h
h
I
EBO
FE-1
FE-2
f
T
Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA
DC Current Gain IC= 2.5A ; VCE= 10V 10 75
DC Current Gain IC= 5A ; VCE= 10V 3
Current-Gain—Bandwidth Product
Switching Times;Duty Cycle≤2%
t
r
t
S
t
f
Rise Time 1.0 μs
Storage Time 2.5 μs
Fall Time
isc Website：www.iscsemi.cn
I
= 0.25A;VCE= 10V;f
C
test
VCC= 125V,tp= 0.1ms
IC=2.5A;IB1= -IB2=0.5 A
=1.0MHz
5 MHz
1.0 μs
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