Datasheet 2N6387, 2N6387G, 2N6388, 2N6388G Datasheet (ON Semiconductor)

2N6387, 2N6388

2N6388 is a Preferred Device

Plastic Medium-Power
Silicon Transistors

These devices are designed for general-purpose amplifier and

low-speed switching applications.

Features

•High DC Current Gain - h

= 2500 (Typ) @ IC = 4.0 Adc

FE

•Collector-Emitter Sustaining Voltage - @ 100 mAdc

V

CEO(sus)

= 60 Vdc (Min) - 2N6387
= 80 Vdc (Min) - 2N6388

•Low Collector-Emitter Saturation Voltage -

V

= 2.0 Vdc (Max) @ IC

CE(sat)

= 5.0 Adc - 2N6387, 2N6388

•Monolithic Construction with Built-In Base-Emitter Shunt Resistors

•TO-220AB Compact Package

•Pb-Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector-Emitter Voltage 2N6387

2N6388

Collector-Base Voltage 2N6387

2N6388

Emitter-Base Voltage V

Collector Current - Continuous

- Peak

Base Current I

Total Power Dissipation @ TC = 25_C
Derate above 25_C

Total Power Dissipation @ TA = 25_C
Derate above 25_C

Operating and Storage Junction,
Temperature Range

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

V

CEO

V

I

P

P

TJ, T

R

R

CB

EB

C

B

D

D

-65 to +150 °C

stg

q

JC

q

JA

60
80

60
80

5.0 Vdc

10
15

250 mAdc

65

0.52

2.0

0.016WW/°C

1.92

62.5

Vdc

Vdc

Adc

W

W/°C

_C/W

_C/W

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DARLINGTON NPN SILICON

POWER TRANSISTORS

8 AND 10 AMPERES

65 WATTS, 60 - 80 VOLTS

MARKING
DIAGRAM

4

TO-220AB

CASE 221A

STYLE 1

1

2

3

2N638x = Device Code

G = Pb-Free Package
A = Assembly Location
Y = Year
WW = Work Week

x = 7 or 8

ORDERING INFORMATION

Device Package Shipping

2N6387 TO-220AB 50 Units / Rail

2N6387G TO-220AB

2N6388 TO-220AB 50 Units / Rail

2N6388G TO-220AB

Preferred devices are recommended choices for future use
and best overall value.

(Pb-Free)

(Pb-Free)

2N638xG

AYWW

50 Units / Rail

50 Units / Rail

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 13

1 Publication Order Number:

2N6387/D

, POWER DISSIPATION (WATTS)

D

P

2N6387, 2N6388

TAT

C

80

4.0

60

3.0

T

C

40

2.0

T

20

1.0

0

20 40 80 100 120 160

0 60 140

Figure 1. Power Derating

A

T, TEMPERATURE (°C)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted) (Note 2)

C

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 3)

(IC = 200 mAdc, IB = 0) 2N6387

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) 2N6387
(VCE = 80 Vdc, IB = 0) 2N6388

Collector Cutoff Current

(VCE = 60 Vdc, V
(VCE - 80 Vdc, V
(VCE = 60 Vdc, V
(VCE = 80 Vdc, V

= 1.5 Vdc) 2N6387

EB(off)

= 1.5 Vdc) 2N6388

EB(off)

= 1.5 Vdc, TC = 125_C) 2N6387

EB(off)

= 1.5 Vdc, TC = 125_C) 2N6388

EB(off)

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388
(IC = 1 0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388

Collector-Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 0.01 Adc) 2N6387, 2N6388
(IC = 10 Adc, IB = 0.1 Adc) 2N6387, 2N6388

Base-Emitter On Voltage

(IC = 5.0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388
(IC = 10 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388

DYNAMIC CHARACTERISTICS

Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f

= 1.0 MHz)

test

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2N6388

Symbol

V

CEO(sus)

I

CEO

I

CEX

I

EBO

h

FE

V

CE(sat)

V

BE(on)

|hfe|

C

ob

h

fe

Min

60
80

-

-

-

-

-

-

-

1000

100

-

-

-

-

20

-

1000

Max

-

-

1.0

1.0

300
300

3.0

3.0

5.0

20,000

-

2.0

3.0

2.8

4.5

-

200

-

Unit

Vdc

mAdc

mAdc

mAdc

mAdc

-

Vdc

Vdc

-

pF

-

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2

2N6387, 2N6388

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA

R

V

1

APPROX

+ 12 V

0

V

2

APPROX

- 8 V
tr, tf v 10 ns

DUTY CYCLE = 1.0%

Figure 2. Switching Times Test Circuit

7.0

5.0

3.0

1.0

0.7

t, TIME (s)μ

0.3

0.2

0.1

0.07

0.1

25 ms

t

s

VCC = 30 V
IC/IB = 250
IB1 = I

B2

TJ = 25°C

0.2 10
IC, COLLECTOR CURRENT (AMPS)

B

D

51

1

[ 8.0 k [ 120

- 4.0 V

FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0

t

f

t

r

0.5 2.0

1.0 5.0

V

CC

+ 30 V

R

C

TUT

t

d

SCOPE

1.0

0.7

0.5

0.3

0.2

0.1

0.07

(NORMALIZED)

0.05

0.03

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.01

0.01

Figure 3. Switching Times

D = 0.5

0.2

0.1

P

0.05

0.02

0.01
SINGLE PULSE

Z

(t) = r(t) R

q

JC

R

q

JC

q

JC

= 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

- TC = P

J(pk)

(pk)

1

Z

q

JC(t)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
t, TIME (ms)

Figure 4. Thermal Response

2

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3

2N6387, 2N6388

20

10

5.0

2.0

1.0
TJ = 150°C

0.5

0.2

0.1

, COLLECTOR CURRENT (AMPS)

C

I

CURVES APPLY BELOW RATED V

0.03

1.0

BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 100°C
SECOND BREAKDOWN LIMITED

2.0 604.0 6.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

dc

50 ms

5 ms

CEO

10 20 80

50 ms

1 ms

2N6387
2N6388

Figure 5. Active‐Region Safe Operating Area

10,000

5000
3000

2000

1000

500
300

200

100

, SMALL-SIGNAL CURRENT GAIN

FE

h

50
30

20

10

1.0

2.0 5.0 10 20 50 100 200 1000

TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc

f, FREQUENCY (kHz)

Figure 6. Small-Signal Current Gain

10 ms

40

500

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 5 is based on T

= 150_C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 150_C. T

may be calculated from the data in Figure

J(pk)

J(pk)

4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown

300

TJ = 25°C

200

C

100

70

C, CAPACITANCE (pF)

50

30

0.1

C

ib

1.0 2.0 5.0 20 10010

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

ob

500.2 0.5

20,000

10,000

5000

3000
2000

1000

, DC CURRENT GAIN

FE

h

500

300
200

TJ = 150°C

25°C

-55°C

0.1

0.2 0.3 0.5 0.7 1.0 2.0 10

IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

VCE = 4.0 V

3.0 5.0

3.0

2.6

2.2

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

7.0

1.0

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4

TJ = 25°C

IC = 2.0 A

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

0.7 2010

4.0 A 6.0 A

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

2N6387, 2N6388

3.0

TJ = 25°C

2.5

2.0

V

@ IC/IB = 250

V, VOLTAGE (VOLTS)

1.5

BE(sat)

VBE @ VCE = 4.0 V

1.0
V

@ IC/IB = 250

CE(sat)

0.5

0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

5

10

REVERSE FORWARD

4

10

VCE = 30 V

3

10

+ 5.0

h

@V

+ 4.0

+ 3.0

C/IB

FE

≤

*I

CE

3

+4.0V

25°C to 150°C

+ 2.0

+ 1.0

*qVC for V

CE(sat)

-55°C to 25°C

0

- 1.0

- 2.0

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

V

- 3.0

- 4.0

- 5.0

qVB for V

0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

25°C to 150°C

BE

IC, COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

COLLECTOR

-55°C to 25°C

2

10

TJ = 150°C

1

10

, COLLECTOR CURRENT (A)μI

0

C

10

10

100°C

-1

25°C

+0.2 +0.40-0.2-0.4-0.6 +0.6 +0.8 +1.0 +1.2 + 1.4

BASE

[ 8.0 k [ 120

EMITTER

VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut-Off Region

Figure 13. Darlington Schematic

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5

2N6387, 2N6388

l

PACKAGE DIMENSIONS

TO-220

CASE 221A-09

ISSUE AE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

-T-

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04

MILLIMETERSINCHES

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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2N6387/D

6