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®
SILICON NPN POWER DARLINGTON TRANSISTOR
■ STMicroelectronics P REF ERRED
SALESTYPE
■ NPN DARLINGTON
■ HIGH CURRENT CAPABILITY
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION
The device is a silicon epitaxial-base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-220 plastic package.
It is inteded for use in low and medium frequency
power applications.
TO-220
2N6388
3
2
1
INTER NAL SCH E M ATI C DIAG RA M
R1 Typ. = 10 KΩ R2 Typ. = 160 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
V
V
I
P
T
Collector-Base Voltage (IB = 0) 80 V
CBO
Collector-Emitter Voltage (VBE = -1.5V) 80 V
CEV
Collector-Emitter Voltage (RBE ≤ 100Ω)
CER
Collector-Emitter Voltage (IB = 0) 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 10 A
I
C
Collector Peak Current 15 A
CM
Base Current 0.25 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
80 V
65 W
o
C
o
C
April 1999
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2N6388
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.92
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= rated V
V
CE
VCE = rated V
= 80 V 1 mA
V
CE
= 5 V 5 mA
V
EB
CEO
Tc = 125 oC
CEO
0.3
3
IC = 200 mA 80 V
Sustaining Voltage
V
CER(sus)
∗ Collector-Emitter
I
= 200 mA RBE = 100 Ω
C
80 V
Sustaining Voltage
V
CEV(sus)
∗ Collector-Emitter
IC = 200 mA VBE = -1.5V 80 V
Sustaining Voltage
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter Voltage IC = 5 A VCE = 3 V
BE
h
∗ DC Current Gain IC = 5 A VCE = 3 V
FE
h
Small Signal Current
fe
Gain
VF∗ Parallel-diode Forward
IC = 5 A IB = 10 mA
I
= 10 A IB = 100 mA
C
2
3
2.8
I
= 10 A VCE = 3 V
C
I
= 10 A VCE = 3 V
C
1000
100
4.5
20000
IC = 1 A VCE = 10 V f = 1MHz
I
= 1 A VCE = 10 V f = 1KHz201000
C
IF = 10 A 4 V
Voltage
C
CBO
Collector Base
IE = 0 VCB = 10 V f = 1MHz 200 pF
Capacitance
I
∗∗ Second Breakdown
s/b
VCE = 25 V 2.6 A
Collector Current
E
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
∗∗ Pulsed: Pulse duration = 100ms non repetitive pulse.
Second Breakdown
s/b
Energy
L = 12 mH R
V
= -1.5 V IC = 4.5 A
BE
= 100 Ω
BE
120 mJ
mA
mA
V
V
V
V
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TO-220 MECHANICAL DATA
2N6388
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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2N6388
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectro nics – Printed in Italy – All Rights Reserved
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