Datasheet 2N6349, 2N6344 Datasheet (ON Semiconductor)

2N6344, 2N6349

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full–wave silicon gate controlled solid–state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.

• Blocking Voltage to 800 Volts

• All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Gate Triggering Guaranteed in all Four Quadrants

• For 400 Hz Operation, Consult Factory

• Device Marking: Logo, Device T ype, e.g., 2N6344, Date Code

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TRIACS

8 AMPERES RMS

600 thru 800 VOLTS

MT2

MT1

G

MAXIMUM RATINGS (T

Rating

*Peak Repetitive Off–State Voltage

(TJ = –40 to +110°C, Sine Wave 50 to
60 Hz, Gate Open) 2N6344

*On–State RMS Current

(TC = +80°C)
Full Cycle Sine Wave 50 to 60 Hz
(TC = +90°C)

*Peak Non–Repetitive Surge Current

(One Full Cycle, Sine Wave 60 Hz,
TC = +25°C)

Preceded and followed by rated current
Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2s
*Peak Gate Power

(TC = +80°C, Pulse Width = 2 µs)
*Average Gate Power

(TC = +80°C, t = 8.3 ms)
*Peak Gate Current

(TC = +80°C, Pulse Width = 2.0 µs)
*Peak Gate Voltage

(TC = +80°C, Pulse Width = 2.0 µs)
*Operating Junction Temperature Range T

*Storage Temperature Range T

(1) V

and V

DRM

voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

RRM

= 25°C unless otherwise noted)

J

Symbol Value Unit

(1)

2N6349

for all types can be applied on a continuous basis. Blocking

V

DRM,

V

RRM

I

T(RMS)

I

TSM

P

GM

P

G(AV)

I

GM

V

GM

J

stg

600
800

8.0

4.0

100 Amps

20 Watts

0.5 Watt

2.0 Amps

10 Volts

–40 to

+125

–40 to

+150

Volts

Amps

°C

°C

4

1

2

3

TO–220AB

CASE 221A

STYLE 4

PIN ASSIGNMENT

1
2
3 Gate
4

Main Terminal 1
Main Terminal 2

Main Terminal 2

ORDERING INFORMATION

Device Package Shipping

2N6344 TO220AB 500/Box
2N6349 TO220AB

Preferred devices are recommended choices for future use
and best overall value.

500/Box

 Semiconductor Components Industries, LLC, 1999

March, 2000 – Rev . 1

1 Publication Order Number:

2N6344/D

2N6344, 2N6349

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

*Thermal Resistance, Junction to Case R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

*Peak Repetitive Blocking Current

(VD = Rated V

DRM

, V

; Gate Open) TJ = 25°C

RRM

ON CHARACTERISTICS

*Peak On–State Voltage

(ITM = "11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p2%)
Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)

MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) TC = –40°C
*MT2(+), G(–); MT2(–), G(+) TC = –40°C

Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)

*MT2(+), G(+); MT2(–), G(–) TC = –40°C
*MT2(+), G(–); MT2(–), G(+) TC = –40°C

Gate Non–Trigger Voltage (Continuous dc)

(VD = Rated V

*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(–)
*Holding Current

(VD = 12 Vdc, Gate Open) TC = 25°C

(Initiating Current = "200 mA) *TC = –40°C

*Turn-On Time

(VD = Rated V

Rise Time = 0.1 µs, Pulse Width = 2 µs)

, RL = 10 k Ohms, TJ = 100°C)

DRM

, ITM = 11 A, IGT = 120 mA,

DRM

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Commutation Voltage

(VD = Rated V

Gate Unenergized, TC = 80°C)

*Indicates JEDEC Registered Data.

, ITM = 11 A, Commutating di/dt = 4.0 A/ms,

DRM

= 25°C unless otherwise noted; Electricals apply in both directions)

C

Symbol Min Typ Max Unit

I

DRM

I

TJ = 100°C

RRM

V

TM

I

GT

V

GT

V

GD

I

H

t

gt

dv/dt(c) — 5.0 — V/µs

θJC

L

,

—
—

— 1.3 1.55 Volts

—
—
—
—
—
—

—
—
—
—
—
—

0.2 — —

—
—

— 1.5 2.0 µs

2.2 °C/W

260 °C

—
—

12
12
20
35
—
—

0.9

0.9

1.1

1.4
—
—

6.0
—

10

2.0

50
75
50

75
100
125

2.0

2.5

2.0

2.5

2.5

3.0

40

75

µA

mA

mA

Volts

Volts

mA

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2

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current

Maximum On State Voltage
Holding Current

2N6344, 2N6349

Voltage Current Characteristic of Triacs

(Bidirectional Device)

on state

I

at V

RRM

Quadrant Definitions for a Triac

MT2 POSITIVE

(Positive Half Cycle)

+

RRM

Quadrant 3
MainTerminal 2 –

V

TM

+ Current

I

H

V

I

H

off state

TM

Quadrant 1
MainTerminal 2 +

I

at V

DRM

DRM

+ Voltage

(+) MT2

Quadrant II Quadrant I

IGT – + I

Quadrant III Quadrant IV

All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.

(–) I

GATE

(–) I

GATE

GT

MT1

REF

(–) MT2

GT

MT1

REF

–

MT2 NEGATIVE

(Negative Half Cycle)

(+) I

GATE

(+) I

GATE

(+) MT2

GT

MT1

REF

(–) MT2

GT

MT1

REF

GT

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3

2N6344, 2N6349

100

α = 30°

96

92

88

C

T , CASE TEMPERATURE ( C)°

84

α = CONDUCTION ANGLE

80

0

α

α

I

, RMS ON-STATE CURRENT, (AMP)

T(RMS)

60°

dc

90°

120°

7.0

180°

AV

P , AVERAGE POWER (WATTS)

8.06.05.04.03.02.01.0

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

1.8 50

1.6

1.4

1.2

OFF-STATE VOL TAGE = 12 V

QUADRANT 4

10

8.0

6.0

4.0

2.0

0

0

30

20

α

α = CONDUCTION ANGLE

TJ [ 100°C

1.0 2.0 3.0 4.0 6.0 7.0 8.0

α

90°

60°

30°

I

, RMS ON-STATE CURRENT (AMP)

T(RMS)

OFF-STATE VOL TAGE = 12 V

dc

α = 180°

120°

5.0

1.0

0.8
QUADRANTS

0.6

gt

V , GATE TRIGGER VOLTAGE (VOLTS)

0.4

–60 20

–40

1
2

3

–20

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. T ypical Gate Trigger Voltage Figure 4. T ypical Gate Trigger Current

0 40 60 80 100 120 140

GT

I , GATE TRIGGER CURRENT (mA)

10

7.0

5.0

QUADRANT

1
2

3
4

140120100806040200–20–40–60

TJ, JUNCTION TEMPERATURE (°C)

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4

2N6344, 2N6349

20

(t),

TRA

SI

T

T

RMA

R

SISTA

(

RMA

IZ

)

100

70
50

30

20

10

7.0

5.0

3.0

2.0

1.0

TM

i , INSTANTANEOUS ON-STATE CURRENT (AMP)

0.7

0.5

TJ = 100°C

25°C

GATE OPEN

MAIN TERMINAL #1

10

7.0

5.0

H

I , HOLDING CURRENT (mA)

3.0

2.0
–40

–60 –20 200 40 10080 140

MAIN TERMINAL #2

POSITIVE

TJ, JUNCTION TEMPERATURE (°C)

POSITIVE

12060

Figure 6. Typical Holding Current

100

80

60

ED
L

NO
NCE

E
L

0.05

HE

0.02

EN

0.01

N

r

0.3

0.2

0.1

1.0

0.5

0.2

0.1

0.80.4 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 5. On–State Characteristics

0.1

40

, PEAK SURGE CURRENT (AMP)

20

TSM

I

0

CYCLE

TJ = 100°C
f = 60 Hz

Surge is preceded and followed by rated current

1.0

Figure 7. Maximum Non–Repetitive

t,TIME (ms)

Figure 8. T ypical Thermal Response

2.0 3.0 5.0 7.0 10
NUMBER OF CYCLES

Surge Current

Z

= r(t) • R

θJC(t)

θJC

2.0 k 10 k20 5.0 k1.0 k500200100505.02.01.00.50.2

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5

2N6344, 2N6349

P ACKAGE DIMENSIONS

TO–220AB

CASE 221A–07

ISSUE Z

SEATING

–T–

PLANE

FB

Q

4

A

123

T

U

C

S

H

K

Z

L

V

R

J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

MILLIMETERSINCHES

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6

Notes

2N6344, 2N6349

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7

2N6344, 2N6349

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2N6344/D