Datasheet 2N6284, 2N6286, 2N6287 Datasheet (ON Semiconductor)

2N6284 (NPN); 2N6286,
2N6287 (PNP)

Preferred Device

Darlington Complementary
Silicon Power Transistors

These packages are designed for general−purpose amplifier and

low−frequency switching applications.

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Features

• High DC Current Gain @ I

= 2400 (Typ) − 2N6284

h

FE

= 10 Adc −

C

= 4000 (Typ) − 2N6287

• Collector−Emitter Sustaining Voltage −

V

CEO(sus)

= 100 Vdc (Min)

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating

Collector−Emitter Voltage

2N6286
2N6284/87

Collector−Base Voltage

2N6286
2N6284/87

Emitter−Base Voltage V

Collector Current − Continuous

Peak

Base Current I

Total Power Dissipation @ TC = 25°C
Derate above 25°C

Operating and Storage Temperature
Range

THERMAL CHARACTERISTICS (Note 1)

Characteristic

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

Symbol Value Unit

V

CEO

V

CB

EB

I

C

B

P

D

TJ, T

stg

Symbol Max Unit

R

q

JC

80

100

80

100

5.0 Vdc

20
40

0.5 Adc

160

0.915

−65 to + 200 °C

1.09 °C/W

Vdc

Vdc

Adc

W

W/°C

20 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS
100 VOLTS, 160 WATTS

COLLECTOR
CASE

BASE

1

EMITTER 2

MARKING DIAGRAM

1

2

TO−204AA (TO−3)

CASE 1−07

STYLE 1

2N628x = Device Code

G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin

x = 4, 6 or 7

ORDERING INFORMATION

Device Package Shipping

2N6284 TO−3 100 Units/Tray

2N6284G TO−3

(Pb−Free)

2N628xG

AYYWW

MEX

100 Units/Tray

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 4

1 Publication Order Number:

2N6286 TO−3 100 Units/Tray

2N6286G TO−3

(Pb−Free)

2N6287 TO−3 100 Units/Tray

2N6287G TO−3

(Pb−Free)

100 Units/Tray

100 Units/Tray

2N6284/D

2N6284 (NPN); 2N6286, 2N6287 (PNP)

160

140

120

100

80

60

40

, POWER DISSIPATION (WATTS)

D

P

20

0

0 75 150

25 50 100 125 200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

175

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted) (Note 2)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(I

= 0.1 Adc, IB = 0) 2N6286

C

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)

Collector Cutoff Current

(VCE = Rated VCB, V

= Rated VCB, V

(V

CE

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TC = 150_C)

BE(off)

Emitter Cutoff Current

(V

= 5.0 Vdc, IC = 0)

BE

ON CHARACTERISTICS (Note 3)

DC Current Gain

(I

= 10 Adc, VCE = 3.0 Vdc)

C

(IC = 20 Adc, VCE = 3.0 Vdc)

Collector−Emitter Saturation Voltage

(I

= 10 Adc, IB = 40 mAdc)

C

(IC = 20 Adc, IB = 200 mAdc)

Base−Emitter On Voltage

(IC = 10 Adc, VCE = 3.0 Vdc)

Base−Emitter Saturation Voltage

(I

= 20 Adc, IB = 200 mAdc)

C

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small−Signal Short−Circuit
Forward Current Transfer Ratio

(I

= 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

C

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 0.1 MHz) 2N6284

CB

Small−Signal Current Gain

(I

= 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

C

2. Indicates JEDEC Registered Data.

3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%

2N6284, 2N6287

2N6286, 2N6287

Symbol

V

CEO(sus)

I

CEO

I

CEX

I

EBO

h

FE

V

CE(sat)

V

BE(on)

V

BE(sat)

|hfe|

C

ob

h

fe

Min

80

100

−

−

−

−

−

750
100

−

−

−

−

4.0

−

−

300

Max

−

−

1.0

1.0

0.5

5.0

2.0

18,000

−

2.0

3.0

2.8

4.0

−

400
600

−

Unit

Vdc

mAdc

mAdc

mAdc

−

Vdc

Vdc

Vdc

MHz

pF

−

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2

2N6284 (NPN); 2N6286, 2N6287 (PNP)

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE I
MSD6100 USED BELOW I

V

2

APPROX

+ 8.0 V

0

V

1

APPROX

- 12 V

25 ms

t

, tf v 10 ns

r

DUTY CYCLE = 1.0%

Figure 2. Switching Times Test Circuit

[ 100 mA

B

[ 100 mA

B

R

B

D

51

1

[ 8.0 k [ 50

+ 4.0 V

FOR td AND tr, D1 IS DISCONNECTED
AND V

= 0

2

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES

TUT

V

CC

- 30 V

R

C

SCOPE

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.07

0.02

0.05

r(t), EFFECTIVE TRANSIENT

0.03

0.02

THERMAL RESISTANCE (NORMALIZED)

0.01

0.01

0.02 0.03

10

7.0

5.0

t

s

2N6284 (NPN)
2N6287 (PNP)

3.0

2.0
t

f

t

r

1.0

0.7

t, TIME (s)μ

0.5

V

= 30 Vdc

CC

0.3

I

= 250

C/IB

0.2

= I

I

B1

B2

TJ = 25°C

0.1

0.2

0.5 2.0 7.0

0.3 0.7 3.0 20

1.0 5.0

td @ V

BE(off)

= 0 V

10

IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

P

R

(t) = r(t) R

q

JC

R

q

JC

q

JC

= 1.09°C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN

0.01

SINGLE PULSE

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

0.3 3.0 30 300

READ TIME AT t
T

- TC = P

J(pk)

(pk)

1

R

(t)

q

JC

t, TIME OR PULSE WIDTH (ms)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

Figure 4. Thermal Response

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3

2N6284 (NPN); 2N6286, 2N6287 (PNP)

ACTIVE−REGION SAFE OPERATING AREA

50

0.1 ms

20

0.5 ms

10

5.0

2.0

1.0

0.5

0.2

, COLLECTOR CURRENT (AMP)

C

I

0.1

0.05

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0 ms

5.0 ms

TJ = 200°C

SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
SINGLE PULSE

2.0 5.0 2010

dc

= 25°C

C

50 100

Figure 5. 2N6284, 2N6287

10,000

5000

2000

1000

500

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I

− V

C

CE

limits of the transistor that must be observed for reliable
operation; i.e. the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 5 is based on T

= 200_C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T

< 200_C. T

J(pk)

may be calculated from the data in

J(pk)

Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

TJ = 25°C
V

= 3.0 Vdc

CE

= 10 A

I

C

200

100

50

, SMALL-SIGNAL CURRENT GAIN

FE

h

20

10

1.0

1000

700

500

300

200

C, CAPACITANCE (PF)

100

0.1

2N6284 (NPN)
2N6287 (PNP)

2.0 5.0 10 20 50 100 200 1000

f, FREQUENCY (kHz)

500

Figure 6. Small−Signal Current Gain

TJ = 25°C

C

ib

C

ob

2N6284 (NPN)
2N6287 (PNP)

1.0 2.0 5.0 20 10010

VR, REVERSE VOLTAGE (VOLTS)

500.2 0.5

Figure 7. Capacitance

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4

2N6284 (NPN); 2N6286, 2N6287 (PNP)

NPN
2N6284

20,000

10,000

, DC CURRENT GAIN

FE

h

VCE = 3.0 V

7000
5000

3000
2000

1000

TJ = 150°C

25°C

700

500

300
200

3.0

2.6

-55°C

0.2 0.3 0.5 0.7 1.0 2.0 20

IC, COLLECTOR CURRENT (AMP)

IC = 5.0 A 10 A 15 A

3.0 5.0

7.0

30,000
20,000

10,000

, DC CURRENT GAIN

FE

h

10

VCE = 3.0 V

TJ = 150°C

7000
5000

3000
2000

1000

700
500

300

0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10

Figure 8. DC Current Gain

3.0

2.6

PNP
2N6287

25°C

-55°C

I

, COLLECTOR CURRENT (AMP)

C

IC = 5.0 A 10 A

TJ = 25°CTJ = 25°C

15 A

2.2

1.8

1.4

, COLLECTOR‐EMITTER VOLTAGE (VOLTS)

CE

V

1.0

0.7 3020 0.5 1.0 2.0 3.0 5.0 7.0 500.7 3020

0.5 1.0 2.0 3.0 5.0 7.0 50

, BASE CURRENT (mA)

I

B

10

Figure 9. Collector Saturation Region

3.0

TJ = 25°C

2.5

2.0

V

@ IC/IB = 250

BE(sat)

VBE @ VCE = 3.0 V

V

@ IC/IB = 250

CE(sat)

0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

1.5

1.0

0.5

2.2

1.8

1.4

, COLLECTOR‐EMITTER VOLTAGE (VOLTS)

CE

V

1.0

, BASE CURRENT (mA)

I

B

3.0
TJ = 25°C

2.5

2.0

V

1.5

V, VOLTAGE (VOLTS)

1.0

10 0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10

0.5

@ IC/IB = 250

BE(sat)

VBE @ VCE = 3.0 V

IC, COLLECTOR CURRENT (AMP)

10

V

CE(sat)

@ IC/IB = 250

Figure 10. “On” Voltages

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5

2N6284 (NPN); 2N6286, 2N6287 (PNP)

NPN
2N6284

+5.0

h

@V

CE

250

+3.0V

+4.0

*APPLIES FOR IC/IB ≤

FE

+3.0

+2.0 +2.0

25°C to 150°C

+1.0

-55°C to + 25°C

-1.0

0

*qVC for V

CE(sat)

-2.0

-3.0

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

V

qVB for V

-4.0

-5.0

0.2 0.3 1.0 2.0 3.0 5.0 7.0 20

BE

0.5 0.7

25°C to + 150°C

-55°C to + 25°C

10 0.2 0.3 1.0 2.0 3.0 5.0 7.0 200.5 0.7 10

IC, COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

5

10

VCE = 30 V

4

10

3

10

TJ = 150°C

2

10

100°C

1

10

, COLLECTOR CURRENT (A)μI

C

REVERSE FORWARD

0

10

25°C

-1

10

+0.2 +0.40-0.2-0.4-0.6 +0.6 +0.8 +1.0 +1.2 + 1.4

VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut−Off Region

PNP
2N6287

+5.0

h

@V

+4.0

*APPLIES FOR IC/IB ≤

FE

+3.0

+1.0

0

-1.0

*qVC for V

-2.0

-3.0

qVB for V

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-4.0

V

CE(sat)

25°C to + 150°C

BE

-5.0

, COLLECTOR CURRENT (AMP)

I

C

3

10

VCE = 30 V

2

10

TJ = 150°C

1

10

0

10

-1

10

, COLLECTOR CURRENT (A)μI

-2

C

10

-3

10

100°C

REVERSE FORWARD

25°C

-0.2 -0.40+0.2+0.4+0.6

VBE, BASE-EMITTER VOLTAGE (VOLTS)

+3.0V

CE

250

25°C to 150°C

-55°C to + 25°C

-55°C to + 25°C

-0.6 -0.8 -1.0 -1.2 -1.4

NPN

2N6284

BASE

COLLECTOR

[ 8.0 k [ 60

EMITTER

PNP

COLLECTOR

2N6287

BASE

[ 8.0 k [ 60

EMITTER

Figure 13. Darlington Schematic

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6

2N6284 (NPN); 2N6286, 2N6287 (PNP)

PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 1−07

ISSUE Z

A

N

C

E

D

2 PL

0.13 (0.005) Y

U

V

H

L

2

1

G

K

M

−Y−

−T−

B

T

SEATING
PLANE

M

Q

M

−Q−

0.13 (0.005) T

M

M

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19

L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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2N6284/D

7