Datasheet 2N 6287 Datasheet

Î

ON Semiconductor

Darlington Complementary

NPN

2N6283

Silicon Power Transistors

. . . designed for general–purpose amplifier and low–frequency

switching applications.

• High DC Current Gain @ I

= 2400 (Typ) – 2N6284

h

FE

= 4000 (Typ) – 2N6287

• Collector–Emitter Sustaining Voltage –

V

CEO(sus)

= 100 Vdc (Min)

• Monolithic Construction with Built–In Base–Emitter Shunt

Resistors

*MAXIMUM RATINGS

ОООООООО

Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous

ОООООООО

Base Current Total Device Dissipation @ TC =

25C

ОООООООО

Derate above 25C

Operating and Storage Junction

Temperature Range

ОООООООО

Rating

Peak

= 10 Adc –

C

Symbo

ÎÎ

V

CEO

V V

I

ÎÎ

I

P

ÎÎ

TJ,T

ÎÎ

l

CB EB C

B

2N6283

ÎÎÎ

2N6286

ÎÎÎ

80 80

5.0 20

ООООООО

40

0.5

D

ООООООО

stg

ООООООО

160

0.915

–65 to +200

2N6284 2N6287

100 100

Î

Unit

Vdc Vdc Vdc Adc

Î

Adc

Watts W/C

Î

C

Î

2N6284

PNP

2N6286

2N6287

DARLINGTON

20 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

100 VOLTS

160 WATTS

CASE 1–07

TO–204AA

(TO–3)

*THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

*Indicates JEDEC Registered Data.

, POWER DISSIPATION (WATTS) P

 Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 1

Symbol

R

θ

JC

Max

1.09

160

140

120

100

80

60

40

D

20

0

25 50 100 125 200

0 75 150

T

, CASE TEMPERATURE (°C)

C

Figure 1. Power Derating

1 Publication Order Number:

Unit

C/W

175

2N6284/D

2N6283 2N6284 2N6286 2N6287

Î

*ELECTRICAL CHARACTERISTICS (T

= 25C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(I

= 0.1 Adc, IB = 0) 2N6283, 2N6286

C

ОООООООООООООООООООО

Collector Cutoff Current

ОООООООООООООООООООО

(V

= 40 Vdc, IB = 0)

CE

= 50 Vdc, IB = 0)

(V

CE

ОООООООООООООООООООО

2N6284, 2N6287

Collector Cutoff Current

(V

ОООООООООООООООООООО

= Rated VCB, V

(V

CE

= Rated VCB, V

CE

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TC = 150C)

BE(off)

Emitter Cutoff Current

(V

ОООООООООООООООООООО

= 5.0 Vdc, IC = 0)

BE

ON CHARACTERISTICS (1)

DC Current Gain

(I

= 10 Adc, VCE = 3.0 Vdc)

C

ОООООООООООООООООООО

= 20 Adc, VCE = 3.0 Vdc)

(I

C

Collector–Emitter Saturation Voltage

ОООООООООООООООООООО

(I

= 10 Adc, IB = 40 mAdc)

C

= 20 Adc, IB = 200 mAdc)

(I

C

ОООООООООООООООООООО

Base–Emitter On Voltage

(I

= 10 Adc, VCE = 3.0 Vdc)

C

Base–Emitter Saturation Voltage

ОООООООООООООООООООО

(I

= 20 Adc, IB = 200 mAdc)

C

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small–Signal Short–Circuit

Forward Current Transfer Ratio

ОООООООООООООООООООО

= 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

(I

C

Output Capacitance

ОООООООООООООООООООО

(V

= 10 Vdc, IE = 0, f = 0.1 MHz) 2N6283, 2N6284

CB

ОООООООООООООООООООО

2N6286, 2N6287

Small–Signal Current Gain

(I

= 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

C

*Indicates JEDEC Registered Data. (1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2%

Symbol

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

I

CEX

ÎÎÎ

I

EBO

ÎÎÎ

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(on)

V

BE(sat)

ÎÎÎ

|hfe|

ÎÎÎ

C

ob

ÎÎÎ

h

fe

Min

80

Î

100

Î

– –

Î

–

Î

– –

Î

750

Î

100

Î

– –

Î

–

Î

4.0

Î

– –

Î

300

Max

–

ÎÎ

–

ÎÎ

1.0

ÎÎ

0.5

ÎÎ

5.0

2.0

ÎÎ

18,000

ÎÎ

–

ÎÎ

2.0

3.0

ÎÎ

2.8

4.0

ÎÎ

–

ÎÎ

400 600

ÎÎ

–

Unit

Vdc

Î

mAdc

Î

mAdc

Î

mAdc

Î

–

Î

Vdc

Î

Vdc

Î

MHz

Î

pF

Î

–

http://onsemi.com

2

2N6283 2N6284 2N6286 2N6287

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE e.g., 1N5825 USED ABOVE I MSD6100 USED BELOW I

V

2

APPROX

+ 8.0 V

0

V

1

APPROX

- 12 V

25 µs

tr, tf  10 ns

DUTY CYCLE = 1.0%

 100 mA

B

 100 mA

B

R

B

D

51

1

 8.0 k  50

+ 4.0 V

FOR td AND tr, D1 IS DISCONNECTED AND V

= 0

2

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES

Figure 2. Switching Times Test Circuit

1.0

0.7 D = 0.5

0.5

0.3

0.2

0.1

0.05

0.07

0.05

r(t), EFFECTIVE TRANSIENT

0.03

0.02

THERMAL RESISTANCE (NORMALIZED)

0.01

0.02

0.02 0.03

0.01

SINGLE PULSE

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

0.3 3.0 30 300

V

CC

- 30 V

R

C

TUT

SCOPE

t, TIME OR PULSE WIDTH (ms)

10

7.0

t

s

5.0

3.0

2.0

1.0

0.7

t, TIME (s)µ

0.5

V

= 30 Vdc

CC

0.3 I

= 250

C/IB

0.2

= I

I

B1

B2

T

= 25°C

J

0.1

0.2

0.5 2.0 7.0

0.3 0.7 3.0 20 IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

R

(t) = r(t) R

θ

JC

R

θ

JC

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

θ

JC

= 1.09°C/W MAX

(pk)

1

R

θ

- TC = P

2N6284 (NPN) 2N6287 (PNP)

t

f

td @ V

1.0 5.0

P

(pk)

(t)

JC

DUTY CYCLE, D = t1/t

t

r

= 0 V

BE(off)

10

t

1

t

2

Figure 4. Thermal Response

http://onsemi.com

3

2N6283 2N6284 2N6286 2N6287

ACTIVE–REGION SAFE OPERATING AREA

10,000

5000

2000

1000

500

200

100

, SMALL-SIGNAL CURRENT GAIN

FE

h

50

0.1 ms

20

0.5 ms

10

5.0

2.0

1.0

0.5

0.2

, COLLECTOR CURRENT (AMP)

C

I

0.1

0.05

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0 ms

5.0 ms

T

= 200°C

J

SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ T SINGLE PULSE

2.0 5.0 2010

dc

Figure 5. 2N6284, 2N6287

50

20

10

1.0

2N6284 (NPN) 2N6287 (PNP)

2.0 5.0 10 20 50 100 200 1000

f, FREQUENCY (kHz)

Figure 6. Small–Signal Current Gain

= 25°C

C

50 100

T

= 25°C

J

V

CE

= 10 A

I

C

= 3.0 Vdc

500

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – V

CE

limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T

= 200C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T 200C. T

may be calculated from the data in Figure 4.

J(pk)

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

1000

T

= 25°C

700

500

300

200

C, CAPACITANCE (PF)

100

0.1

C

ib

2N6284 (NPN) 2N6287 (PNP)

1.0 2.0 5.0 20 10010

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

C

J

ob

500.2 0.5

<

http://onsemi.com

4

2N6283 2N6284 2N6286 2N6287

NPN 2N6284

20,000

10,000

, DC CURRENT GAIN

FE

h

VCE = 3.0 V

T

7000

= 150°C

J

5000

3000 2000

1000

700

25°C

-55°C

500

300 200

0.2 0.3 0.5 0.7 1.0 2.0 20

3.0 5.0

7.0

IC, COLLECTOR CURRENT (AMP)

3.0

2.6

IC = 5.0 A 10 A 15 A

30,000 20,000

10,000

VCE = 3.0 V

T

= 150°C

J

7000 5000

3000 2000

, DC CURRENT GAIN

FE

1000

h

700 500

10

300

0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10

Figure 8. DC Current Gain

3.0

2.6

PNP 2N6287

25°C

-55°C

I

, COLLECTOR CURRENT (AMP)

C

IC = 5.0 A 10 A

15 A

T

= 25°CTJ = 25°C

J

2.2

1.8

1.4

, COLLECTOREMITTER VOLTAGE (VOLTS)

CE

V

1.0

0.7 3020 0.5 1.0 2.0 3.0 5.0 7.0 500.7 3020

0.5 1.0 2.0 3.0 5.0 7.0 50

, BASE CURRENT (mA)

I

B

10 10

Figure 9. Collector Saturation Region

3.0

T

= 25°C

J

2.5

2.0

V

@ IC/IB = 250

BE(sat)

1.5

V, VOLTAGE (VOLTS)

VBE @ VCE = 3.0 V

1.0

V

@ IC/IB = 250

CE(sat)

0.5

0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0

IC, COLLECTOR CURRENT (AMP)

2.2

1.8

1.4

, COLLECTOREMITTER VOLTAGE (VOLTS)

CE

V

1.0

, BASE CURRENT (mA)

I

B

3.0 T

= 25°C

J

2.5

2.0

V

1.5

V, VOLTAGE (VOLTS)

1.0

10 0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10

0.5

@ IC/IB = 250

BE(sat)

VBE @ VCE = 3.0 V

V

CE(sat)

@ IC/IB = 250

IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

http://onsemi.com

5

2N6283 2N6284 2N6286 2N6287

NPN 2N6284

+5.0

h

@V

+4.0

*APPLIES FOR IC/I

+3.0

+2.0 +2.0

≤

B

FE

25°C to 150°C

CE

250

 3.0V

+1.0

-55°C to + 25°C

-1.0

0

*θV

for V

C

CE(sat)

-2.0

-3.0

θV

for V

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-4.0

V

-5.0

B

0.2 0.3 1.0 2.0 3.0 5.0 7.0 20

BE

0.5 0.7

25°C to + 150°C

-55°C to + 25°C

10 0.2 0.3 1.0 2.0 3.0 5.0 7.0 200.5 0.7 10

IC, COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

5

10

VCE = 30 V

4

10

3

10

T

= 150°C

J

2

100°C

1

10

, COLLECTOR CURRENT (A)µI

C

REVERSE FORWARD

0

10

25°C

-1

10

+0.2 +0.40-0.2-0.4-0.6 +0.6 +0.8 +1.0 +1.2 + 1.4

VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut–Off Region

PNP 2N6287

+5.0

h

@V

+4.0

+3.0

*APPLIES FOR IC/I

FE

≤

B

+1.0

0

-1.0

*θV

for V

C

for V

B

CE(sat)

25°C to + 150°C

BE

-2.0

-3.0

θV

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-4.0

V

-5.0

IC, COLLECTOR CURRENT (AMP)

3

10

VCE = 30 V

2

10

T

= 150°C

J

1

10

0

10

-1

10

, COLLECTOR CURRENT (A)µI

-2

C

10

-3

10

100°C

REVERSE FORWARD

25°C

-0.2 -0.40+0.2+0.4+0.6

VBE, BASE-EMITTER VOLTAGE (VOLTS)

 3.0V

CE

250

25°C to 150°C

-55°C to + 25°C

-0.6 -0.8 -1.0 -1.2 -1.4

NPN

2N6284

BASE

 8.0 k  60

COLLECTOR

EMITTER

PNP

COLLECTOR

2N6287

BASE

 8.0 k  60

EMITTER

Figure 13. Darlington Schematic

http://onsemi.com

6

2N6283 2N6284 2N6286 2N6287

PACKAGE DIMENSIONS

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

A

N

C

E

D

2 PL

0.13 (0.005) Y

U

V

H

L

2

1

G

K

M

–Y–

–T–

B

T

SEATING PLANE

M

Q

M

–Q–

0.13 (0.005) T

M

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF B --- 1.050 --- 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N --- 0.830 --- 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

http://onsemi.com

7

2N6283 2N6284 2N6286 2N6287

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment:

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com

Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada

N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support

German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)

Email: ONlit–german@hibbertco.com

French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)

Email: ONlit–french@hibbertco.com

English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)

Email: ONlit@hibbertco.com

EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781

*Available from Germany, France, Italy, UK, Ireland

CENTRAL/SOUTH AMERICA:

Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)

Email: ONlit–spanish@hibbertco.com

Toll–Free from Mexico: Dial 01–800–288–2872 for Access –

then Dial 866–297–9322

ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support

Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)

Toll Free from Hong Kong & Singapore: 001–800–4422–3781

Email: ONlit–asia@hibbertco.com

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700 Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local Sales Representative.

http://onsemi.com

8

2N6284/D

Datasheet 2N 6287 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual